Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107

An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.

High-performance multiplexed vibration sensor system based on fiber lasers - art. no. 683019

This paper describes a high-performance multiplexed vibration sensor system using fiber lasers. A serial vibration sensor array consists of four short cavity fiber lasers. The system employs a single, polarization-insensitive, unbalanced Michelson interferometer to translate individual laser wavelength shifts induced by vibration signals into interferometer phase shifts. A dense wavelength division demultiplexor (DWDM) with high channel isolation is inserted to demultiplex each laser signal as a wavelength filter. Finally, a digital phase demodulator based on the phase generated carrier technique is used to achieve high-resolution interrogation. Experimental results show that no observable crosstalk is measured on the output channels, and the minimal detectable acceleration of this system is similar to 200ng/root Hz at 250Hz, which is fundamentally limited by the frequency noise of the lasers.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance

In this paper, a mini-staged multi-stacked quantum cascade laser structure with a designed wavelength of 4.7 mu m is presented. By introducing five 0.5 mu m thick high thermal conductivity InP interbuffer layers, the 60-stages active region core of the quantum cascade laser is divided into six equal parts. Based on simulation, this kind of quantum cascade laser with a 10 mu m ridge width gives nearly circular two-dimensional far-field distribution (FWHM = 32.8 degrees x 29 degrees) and good beam quality parameters M-2 = 1.32 x 1.31 in the fast axis (growth direction) and the slow axis (lateral direction). Due to the enhancement of lateral heat extraction through the interbuffer layers, compared to the conventional structure, a decrease of about 5-6% for the maximum temperature in the active region core of the mini-staged multi-stacked quantum cascade laser with indium-surrounded and gold-electroplated packaging profiles is obtained at all possible dissipated electrical power levels.

Fabrication and performance of an index-coupled DFB laser with sampled grating

An index-coupled DFB laser with a sampled grating has been designed and fabricated. The key concept of the approaches is to utilize the +1st-order reflection of the sampled grating for laser operation, and use a conventional holographic exposure combined with the usual photolithography to form the sampled grating. The typical threshold current of the sampled grating DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5314 mu m, which is the +1st-order peak of the sampled grating.

Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P

We introduce a double source electron beam evaporation (DSEBET) technique in this paper. The refractive index coatings were fabricated on K9 glass substrate by adjusting the evaporation rates of two independent sources. The coatings, which were described by atomic force microscopy (AFM), show good compactness and homogeneity. The antireflective (AR) coatings were fabricated on Superluminescent Diodes (SLD) by DSEBET. The hybrid AR coatings on the facets of SLD were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. The results of AFM and spectral performance of coated SLD show that DSEBET has a promising future in preparing the coatings on optoelectronic devices.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Characterization of high-speed optoelectronics devices based optical and electrical spectra analyses - art. no. 68380Q

In this paper, we presents the characterization technique of high-speed optoelectronics devices based electrical and optical spectra, which is as important access to the devices performance as the prevalent vector network analyzer (VNA) sweeping method. The measurement of additional modulation of laser and frequency response of photodetector from electrical spectra, and the estimation of the modulation indexes and the chirp parameters of directly modulated lasers based on optical spectra analysis, are given as examples.

High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.