Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y


Autoria(s): Cheng YB; Pan JQ; Zhou F; Wang BJ; Zhu HL; Zhao LJ; Wang W
Data(s)

2007

Resumo

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal.

[Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei] Chinese Acad Sci, Inst Semicond, State Key lab Integrated Optoelect, Beijing 100083, Peoples R China

SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal.

Identificador

http://ir.semi.ac.cn/handle/172111/7860

http://www.irgrid.ac.cn/handle/1471x/65759

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Cheng, YB ; Pan, JQ ; Zhou, F ; Wang, BJ ; Zhu, HL ; Zhao, LJ ; Wang, W .Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y .见:SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC MATERIALS AND DEVICES II,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2007,6782: Y7820-Y7820 Part 1-2

Palavras-Chave #光电子学 #butt joint
Tipo

会议论文