High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
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2008
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| Resumo |
Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate. Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T02:11:56Z (GMT). No. of bitstreams: 1 696.pdf: 952085 bytes, checksum: a2225e70004d133ec0b6081adc8516d9 (MD5) Previous issue date: 2008 SPIE.; Chinese Opt Soc. [Zhang, Yang; Yan, Fawang; Gao, Haiyong; Li, Jinmin; Zeng, Yiping; Wang, Guohong; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Zhang, Y ; Yan, FW ; Gao, HY ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH .High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T .见：SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: T8410-T8410 |
| Palavras-Chave | #光电子学 #GaN #nitrides #LED #MOCVD #patterned sapphire substrate #wet etching |
| Tipo |
会议论文 |
