RELATION BETWEEN THE METASTABILITY OF EL2 AND THE PHOTOSENSITIVITY OF LOCAL VIBRATIONAL-MODES IN SEMIINSULATING GAAS

Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVAs) center which has three modes at 730 cm(-1) (A), 715 cm(-1) (B), and 714 cm(-1) (C), respectively, a suggested NH center related to a line at 983 cm(-1) (X(1)), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresponding to a group of peaks in the region of 2900-3500 cm(-1). The photosensitivity of various local vibration centers was observed to have similar time dependence under near-infrared illumination and was suggested to be due to their charge-state interconversion. Mainly described in this work is the effect of the 1.25-eV illumination. It is confirmed that this photoinduced kinetic process results from both electron capture and hole capture, which are closely related to the photoionization behavior and metastability of the EL2 center.

Light and annealing induced changes in Si-H bonds in undoped a-Si : H

Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a differential infrared spectroscopy method. The light-induced changes in Si-H bonds are not monotonic, quite different from the usual Staebler-Wronski effect in electronic properties, and involve more complicated physics. The magnitude of the light-induced changes in Si-H bonds is proportional to the hydrogen content in the film. There may exist more than one microscopic process which determine the light-induced changes in Si-H bonds. Almost the whole a-Si:H network is affected when a-Si:H is subjected to Light-soaking or to annealing. The light-induced changes in Si-H bonds may be an independent light-induced phenomenon or an auxiliary process of the metastable SWE defect creation. (C) 2000 Elsevier Science Ltd. All rights reserved.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

A NEW METHOD FOR DETECTING SUBTLE CHANGES IN SI-H BONDS OF A-SI-H

A new method developed for detecting possible subtle changes in Si-H bonds of a-Si:H after light soaking is described in detail. The method promises a sensitivity orders of magnitude higher than that reached by the usual IR spectrometer. Some preliminary results on phosphorus doped a-Si:H are given.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

Phase transition behavior and structure of the thermotropic liquid crystal 6-{[(4 '-{[(undecyl)carbonyl]oxy}biphenyl-4yl)carbonyl]oxy}-1-hexyne

The phase transition behaviors and corresponding structures of 6-{[(4'-([(undecyl)carbonyl]oxy)biphenyl-4yl)carbonyl]oxyl-l-hexyne (A4EE11) were investigated using differential scanning calorimetry (DSC), polarizing optical microscopy (POM) and wide angle X-ray diffraction (WAXD). In comparison with the published homologues, 5- [(4'-heptoxy-biphenyl-4-yl)carbonyl]oxyl-1-pentyne (A3EO7) which shows a monotropic smectic A (SmA) phase and a metastable monotropic smectic C (SmC) phase; 5-{ [(4'-heptoxybiphenyl-4-yl)oxy]carbonyl)- I-pentyne (A3E'O7) that exhibits three enantiotropic stable liquid crystalline (LC) phases, SmA phase, SmC phase and smectic X (SmX) phase; 5-{[(4'-heptoxy-biphenyl-4-yl)carbonyl]oxy}-1-undecyne (A9EO7) which has a monotropic SmA phase and a metastable crystal phase, A4EE11 integrates the enantiotropy, monotropy and metastability of the LC phases of those three compounds. Upon cooling from isotropic state to room temperature, in the temperature range of 62.0 to 58.5 degrees C, A4EE11 shows an enantiotropic smectic A (SmA) phase with a layer spacing d=32.69 angstrom.

Spatially-confined crystallization of poly(vinylidene fluoride)

Nanometre-sized poly(vinylidene fluoride) (PVDF) particle domains in a confined space were obtained by blending PVDF with excess poly(methyl methacrylate) (PMMA). When these particles were small enough they showed beta -form structure, which was different from the structure of bigger particles or PVDF bulk. However, the beta -form was thermodynamically metastable because it could eventually be transformed to a more stable phase by annealing at a certain temperature. Larger particle domains were of identical phase to the bulk, indicating that small size favours the formation of the beta -form. (C) 2000 Society of Chemical Industry.

Dependence of the Brill transition on the crystal size of nylon 10 10

Nylon 10 10 crystals, which isothermally crystallized from the molten state and cold crystallized from melt-quenched samples at various temperatures, were investigated by using temperature-variable wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS). No Brill transition occurred for the melt-crystallized crystals. However, this transition was easily observed for the cold-crystallized nylon 10 10, and the transition temperature is pertinent to the crystallization temperature. The sizes of these crystals was determined by SAYS and correlated with the Brill transition temperatures (T-B). It was found that the T-B had a linear relationship with the size of crystals, which was used to predict the T-B for those crystals with thick lamella and to calculate the crystal size showing T-B below room temperature. Nylon 10 10 crystal will possess the gamma form (pseudohexagonal form) rather than the a phase at room temperature if its size becomes small enough.

Size-affected crystallization of trans-1,4-polybutadiene

By using different catalyst systems, two trans-1,4-polybutadiene (TPBD) samples with different tr trans-content and molecular weight were synthesized. The phase transition of two samples from monoclinic form to hexagonal phase was revealed by differential calorimeter scanning and X-ray, respectively. The small-angle X-ray scattering measurements showed the remarkable discrepancy of phase transition and melting point between the two samples was attributed to the different lamellar thickness of crystals: The crystals with different crystalline morphology and lamellar thickness were developed by casting different concentration TPBD solutions. Transmission electron microscopy morphology observations proved that annealing the specimen at the temperature above the phase transition point for different times resulted in the different lamellae thickening of monoclinic form. It means that annealing the TPBD in its hexagonal phase will also slightly favor the increase of both the phase transition temperature and melting point of hexagonal phase. (C) 2001 Elsevier Science Ltd. All rights reserved.

Conformation transformation of syndiotactic polypropylene induced by stretching and annealing

Conformation transformation of syndiotactic polypropylene(sPP) induced by stretching and annealing processes has been investigated by WAXD, IR and DSC, The results indicate that not only the quenched samples but also the isothermally crystallized samples can form the crystals with all-trans conformation by means of uniaxially stretching at room temperature. The all-trans conformation crystals are of metastability, which can transform to stable crystals with (TTGG)(2) helical conformation at higher annealing temperatures.