Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes


Autoria(s): Liu XF; Liu JP; Li JP; Wang YT; Li LY; Sun DZ; Kong MY; Lin LY
Data(s)

1999

Resumo

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12900

http://www.irgrid.ac.cn/handle/1471x/65420

Idioma(s)

英语

Fonte

Liu XF; Liu JP; Li JP; Wang YT; Li LY; Sun DZ; Kong MY; Lin LY .Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):551-555

Palavras-Chave #半导体材料 #reverse leakage current #crystalline quality #SiGe Se p-n heterojunction diodes #LAYERS
Tipo

期刊论文