Light and annealing induced changes in Si-H bonds in undoped a-Si : H
Data(s) |
2000
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Resumo |
Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a differential infrared spectroscopy method. The light-induced changes in Si-H bonds are not monotonic, quite different from the usual Staebler-Wronski effect in electronic properties, and involve more complicated physics. The magnitude of the light-induced changes in Si-H bonds is proportional to the hydrogen content in the film. There may exist more than one microscopic process which determine the light-induced changes in Si-H bonds. Almost the whole a-Si:H network is affected when a-Si:H is subjected to Light-soaking or to annealing. The light-induced changes in Si-H bonds may be an independent light-induced phenomenon or an auxiliary process of the metastable SWE defect creation. (C) 2000 Elsevier Science Ltd. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Sheng SR; Kong GL; Liao XB .Light and annealing induced changes in Si-H bonds in undoped a-Si : H ,SOLID STATE COMMUNICATIONS,2000,116(9):519-524 |
Palavras-Chave | #半导体物理 #amorphous silicon #semiconductors #infrared absorption #HYDROGENATED AMORPHOUS-SILICON #MODEL #METASTABILITY #SOAKING |
Tipo |
期刊论文 |