Search for signature inversion in the pi i(13/2) circle times upsilon i1(3/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques. The experiments for Au-182 and 186Au have been performed in the Japan Atomic Energy Agency (JAEA) via the Sm-152(Cl-35,5n)Au-182 and Yb-172(F-19,5n)Au-186 reactions, respectively. A study of Au-184 has been made using a multi-detector array GASP in LNL, Italy, via the Tb-159(Si-29,4n)Au-184 reaction. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) nu i(13/2) band and the ground-state band in 184 Au has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands in Au-182,Au-184,Au-186 according to our spin-assignment and the signature crossing observed at high-spin states.

Search for signature inversion in the pi i(13/2)circle times nu i(13/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques via the Sm-152(Cl-35,5n) Au-182, Yb-172(F-19,5n) (186)An, and Tb-159(Si-29,4n) (184)An reactions, respectively. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) circle times nu i(13/2) band and the ground-state band in Au-184 has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands according to our spin-assignment and-the signature crossing observed at high-spin states.

The search for the IFN-gamma receptor in fish: Functional and expression analysis of putative binding and signalling chains in rainbow trout Oncorhynchus mykiss

Interferons (IFNs), consisting of three major subfamilies, type I, type II (gamma) and type III (lambda) IFN, activate vertebrate antiviral defences once bound to their receptors. The three IFN subfamilies bind to different receptors, IFNAR1 and IFNAR2 for type I IFNs, IFN gamma R1 and IFN gamma R2 for type II IFN, and IL-28R1 and IL-10R2 for type III IFNs. In fish, although many types I and II IFN genes have been cloned, little is known about their receptors. In this report, two putative IFN-gamma receptor chains were identified and sequenced in rainbow trout (Oncorhynchus mykiss), and found to have many common characteristics with mammalian type II IFN receptor family members. The presented gene synteny analysis, phylogenetic tree analysis and ligand binding analysis all suggest that these molecules are the authentic IFN gamma Rs in fish. They are widely expressed in tissues, with IFN gamma R1 typically more highly expressed than IFN gamma R2. Using the trout RTG-2 cell line it was possible to show that the individual chains could be differentially modulated, with rIFN-gamma and rIL-1 beta down regulating IFN gamma R1 expression but up regulating IFN gamma R2 expression. Overexpression of the two receptor chains in RTG-2 cells revealed that the level of IFN gamma R2 transcript was crucial for responsiveness to rIFN-gamma, in terms of inducing gamma IP expression. Transfection experiments showed that the two putative receptors specifically bound to rIFN-gamma. These findings are discussed in the context of how the IFN gamma R may bind IFN-gamma in fish and the importance of the individual receptor chains to signal transduction. (c) 2009 Elsevier Ltd. All rights reserved.

Involvement of Fas/FasL system in apoptotic signaling in testicular germ cells of male Wistar rats injected i.v. with microcystins

Previous studies have shown that gonads were the second target organ of microcystins (MCs), and that MCs exposure exerted obvious toxic effects on male reproductive system of mammals. However, relevant molecular evidences are still lacking. Fas-signaling pathway plays a key role in toxicant-induced germ cell apoptosis. This study was to evaluate the responses of Fas/FasL system related genes and proteins in testes of rats injected intravenously with MCs. Enhanced apoptosis of germ cells in the testes of MCs-treated rats was detected by the terminal deoxynucleotidyl transferase-mediated deoxy-UTP nick end labeling (TUNEL) associated with up-regulation of the Fas/FasL system. Both Fas and FasL protein expression were induced evidently from I h post-injection, and this high expression level maintained throughout the experiment. In addition, the activation of caspase-8 and caspase-3 protein was also observed, which were indicators of apoptosis. These results suggested the likely involvement of Fas/FasL system in the MCs-induced germ cell apoptosis. It is also suggested that MCs can cause damage to Sertoli cells directly. (C) 2009 Elsevier Ltd. All rights reserved.

Expressional induction of Paralichthys olivaceus cathepsin B gene in response to virus, poly I:C and lipopolysaccharide

Cathepsin B is a lysosomal cysteine protease of the papain-like enzyme family with multiple biological functions. In this study, Paralichthys olivaceus cathepsin B (PoCatB) cDNA was isolated from flounder embryonic cells (FEC) treated with UV-inactivated grass carp hemorrhage virus (GCHV) and subsequently identified as a vitally induced gene. The full length cDNA of PoCatB is 1801 bp encoding 330-amino acids. The deduced protein has high homology to all known cathepsin B proteins, containing an N-terminal signal peptide, cysteine protease active sites, the occluding loop segment and a glycosylation site, all of which are conserved in the cathepsin B family. PoCatB transcription of FEC cells could be induced by turbot (Scophthalmus maximus) rhabdovirus (SMRV), UV-inactivated SMRV, UV-inactivated GCHV, poly I:C or lipopolysaccharide (LPS), and SMRV or poly I:C was revealed to be most effective among the five inducers. In normal flounder, PoCatB mRNA was detectable in all examined tissues. Moreover, SMRV infection could result in significant upregulation of PoCatB mRNA, predominantly in spleen, head kidney, posterior kidney, intestine, gill and muscle with 18.2,10.9, 24.7,12, 31.5 and 18 fold increases at 72 h post-infection respectively. These results provided the first evidence for the transcriptional induction of cathepsin B in fish by virus and LPS, indicating existence of a novel function in viral defense. (C) 2008 Elsevier Ltd. All rights reserved.

Molecular cloning and expression characterization of ApoC-I in the orange-spotted grouper

Endogenous yolk nutrients are crucial for embryo and larval development in fish, but developmental behavior of the genes that control yolk utilization remains unknown. Apolipoproteins have been shown to play important roles in lipid transport and uptake through the circulation system. In this study, EcApoC-I, the first cloned ApoC-I in teleosts, has been screened from pituitary cDNA library of female orange-spotted grouper (Epinephelus coioides), and the deduced amino acid sequence shows 43.5% identity to one zebrafish (Danio rerio) hypothetical protein similar to ApoC-I, and 21.2%, 21.7%, 22.5%, 20%, and 22.5% identities to Apo C-I of human (Homo sapiens), house mouse (Mus musculus), common tree shrew (Tupaia glis), dog (Canis lupus familiaris) and hamadryas baboon (Papio hamadryas), respectively. Although the sequence identity is low, amphipathic alpha-helices with the potential to bind to lipid were predicted to exist in the EcApoC-I. RT-PCR analysis revealed that it was first transcribed in gastrula embryos and maintained a relatively stable expression level during the following embryogenesis. During embryonic and early larval development, a very high level of EcApoC-I expression was in the yolk syncytial layer, indicating that it plays a significant role in yolk degradation and transfers nutrition to the embryo and early larva. By the day 7 after hatching, EcApoC-I transcripts were observed in brain. In adult, EcApoC-I mRNA was detected abundantly in brain and gonad. In transitional gonads, the EcApoC-I expression is restricted to the germ cells. The data suggested that EcApoC-I might play an important role in brain and gonad morphogenesis and growth.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

AlGaN-based resonant-cavity-enhanced (RCE) p-i-n photodetectors (PDs) for operating at the wavelength of 330 nm were designed and fabricated. A 20.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector (DBR) was used as the back mirror and a 3-pair AlN/Al0.3Ga0.7N DBR as the front one. In the cavity is a p-GaN/i-GaN/n-Al0.3Ga0.7N structure. The optical absorption of the RCE PD structure is at most 59.8% deduced from reflectance measurement. Selectively enhanced by the cavity effect, a response peak of 0.128 A/W at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. The peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.

Substantial photo-response of InGaN p-i-n homojunction solar cells

InGaN p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (V-oc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p-i-n solar cells.

Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.

InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer

Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm.

One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals

A simple one-pot method is developed to prepare size-and shape-controlled copper(I) sulfide (Cu2S) nanocrystals by thermolysis of a mixed solution of copper acetylacetonate, dodecanethiol and oleylamine at a relatively high temperature. The crystal structure, chemical composition and morphology of the as-obtained products are characterized by powder x-ray diffraction (PXRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The morphology and size of the Cu2S nanocrystals can be easily controlled by adjusting the reaction parameters. The Cu2S nanocrystals evolve from spherical to disk-like with increasing reaction temperature. The spherical Cu2S nanocrystals have a high tendency to self-assemble into close-packed superlattice structures. The shape of the Cu2S nanodisks changes from cylinder to hexagonal prism with prolonged reaction time, accompanied by the diameter and thickness increasing. More interestingly, the nanodisks are inclined to self-assemble into face-to-face stacking chains with different lengths and orientations. This one-pot approach may extend to synthesis of other metal sulfide nanocrystals with different shapes and sizes.