Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

National Natural Science Foundation of China 60510173 60536010605060066060601960777029National Basic Research Program of China 2006CB604902 2006CB302806 2006dfa11880 This work was supported in part by the National Natural Science Foundation of China under Grants 60510173, 60536010, 60506006, 60606019, and 60777029, and in part by the National Basic Research Program of China under Grants 2006CB604902, 2006CB302806, and 2006dfa11880.