Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

High brightness AlGaInP orange light emitting diodes

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

An auto-focusing method for imaging ellipsometry system

An auto-focusing method based on the image brightness gradient sharpness function is presented for imaging ellipsometry system, in which the image plane of the thin-film specimen is not perpendicular to the optical axis. The clear image of a specimen with large area is obtained by moving the imaging sensor in optical axis direction and around its sensitive surface centre successively. The experimental results demonstrate its feasibility.

Experimental Study on the Ignition Process of Single Coal Particles at Microgravity

In this paper, the first Chinese microgravity (μ-g) experimental study on coal combustion was introduced. An experimental system used to study the ignition process of single coal particles was built up, complying with the requirements of the 3.5 s drop tower in the National Microgravity Laboratory of China (NMLC). High volatile bituminous and lignite coal particles with diameter of 1.5 and 2.0 mm were tested. The ignition and combustion process was recorded by a color CCD and the particle surface temperature before and at the ignition was determined by the RGB colorimetric method. Comparative experiments were conducted at normal gravity (1-g). The experiments revealed that at different gravity levels, the ignition of all tested coal particles commenced in homogeneous phase, while the shape, structure, brightness and development of the flames, as well as the volatile matter release during the ignition process are different. At μ-g, the part of volatile was released as a jet, while such a phenomenon was barely observed at 1-g. Also, after ignition, flames were more spherical, thicker, laminated and dimmer at μ-g. It was confirmed that ignition temperature decreased as the particle size or volatile content increased. However, contradicted to existing experimental results, provided other experimental conditions except gravity level were the same, ignition temperature of coal particles was about 50–80 K lower at μ-g than that at 1-g.

COLOR-HOLOGRAPHY USING THE ANGULAR SELECTIVITY OF VOLUME RECORDING MEDIA

A display hologram of an object can be recorded and reconstructed in three primary colors if the angular selectivity of volume recording media is exploited. Three holograms are recorded in the same medium, each at a different primary color. These three holograms are reconstructed by simultaneous illumination of the hologram with the original reference beams. By proper choice of the angles that the reference beams make to the hologram, it is possible to suppress strongly cross talk between the different reconstructions (e.g., the red object reconstruction in green light). The technique exhibits high resolution, high diffraction efficiency, and vivid colors. Through the addition of three holographically recorded volume gratings it is possible to reconstruct the hologram with a beam of white light. The saturation and brightness of each primary color in the reconstruction can be adjusted by selection of an appropriate thickness for the corresponding grating.

Further acceleration of MeV electrons by a relativistic laser pulse

With the development of photocathode rf electron gun, electrons with high-brightness and mono-energy can be obtained easily. By numerically solving the relativistic equations of motion of an electron generated from this facility in laser fields modelled by a circular polarized Gaussian laser pulse, we find the electron can obtain high energy gain from the laser pulse. The corresponding acceleration distance for this electron driven by the ascending part of the laser pulse is much longer than the Rayleigh length, and the light amplitude experienced on the electron is very weak when the laser pulse overtakes the electron. The electron is accelerated effectively and the deceleration can be neglected. For intensities around 10(19) W(.)mu m(2)/cm(2), an electron's energy gain near 0.1 GeV can be realized when its initial energy is 4.5 MeV, and the final velocity of the energetic electron is parallel with the propagation axis. The energy gain can be up to 1 GeV if the intensity is about 10(21) W(.)mu m(2)/cm(2). The final energy gain of the electron as a function of its initial conditions and the parameters of the laser beam has also been discussed.

Optimization of high-order harmonic by genetic algorithm for the chirp and phase of few-cycle pulses

The brightness of a particular harmonic order is optimized for the chirp and initial phase of the laser pulse by genetic algorithm. The influences of the chirp and initial phase of the excitation pulse on the harmonic spectra are discussed in terms of the semi-classical model including the propagation effects. The results indicate that the harmonic intensity and cutoff have strong dependence on the chirp of the laser pulse, but slightly on its initial phase. The high-order harmonics can be enhanced by the optimal laser pulse and its cutoff can be tuned by optimization of the chirp and initial phase of the laser pulse.

Comparison of uniform amplitude beam and intercepted Gaussian beam superresolution theories

The general superresolution theories for uniform amplitude beams and intercepted Gaussian beams are investigated. For these two types of incident beam, both two-zone amplitude and pure-phase filters are adopted to provide specific numerical descriptions of their differences in superresolution performances. Simulated results of comparisons between their performances indicate that, with the same spot size ratio, the intercepted Gaussian beam achieves a higher central image brightness ratio and significantly lower side-lobe effect irrespective of the filter used. (c) 2008 Elsevier Ltd. All rights reserved.

新一代大功率固体板条激光器的技术进展

介绍了固体板条激光器为了获得大功率和高光束质量而采用的新技术, 阐述了新一代大功率固体板条激光器的最新进展, 分析了新一代大功率固体板条激光器的技术特点, 并对其应用前景进行了展望。