High brightness AlGaInP orange light emitting diodes

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

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SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA China Opt & Optoelectr Mfg Assoc.

Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China

SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA China Opt & Optoelectr Mfg Assoc.