High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

1.58 mu m InGaAs quantum well laser on GaAs

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.

Hole-mediated electric field tunable high Curie temperature in Mn-doped wurtzite ZnO nanowires

The hole-mediated Curie temperature in Mn-doped wurtzite ZnO nanowires is investigated using the k center dot p method and mean field model. The Curie temperature T-C as a function of the hole density has many peaks for small Mn concentration (x(eff)) due to the density of states of one-dimensional quantum wires. The peaks of T-C are merged by the carriers' thermal distribution when x(eff) is large. High Curie temperature T-C > 400 K is found in (Zn,Mn)O nanowires. A transverse electric field changes the Curie temperature a lot. (Zn,Mn)O nanowires can be tuned from ferromagnetic to paramagnetic by a transverse electric field at room temperature. (c) 2007 American Institute of Physics.

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.

The research of range-gated laser night vision system on cars - art. no. 68351V

The characteristic of several night imaging and display technologies on cars are introduced. Compared with the current night vision technologies on cars, Range-gated technology can eliminate backscattered light and increase the SNR of system. The theory of range-gated image technology is described. The plan of range-gated system on cars is designed; the divergence angle of laser can be designed to change automatically, this allows overfilling of the camera field of view to effectively attenuate the laser when necessary. Safety range of the driver is calculated according to the theory analysis. Observation distance of the designed system is about 500m which is satisfied with the need of safety driver range.

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

Parallel optical communication subsystem based on VCSEL - art. no. 67833I

A parallel optical communication subsystem based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The bit error rate of this parallel optical communication subsystem is about 0 under the test by SDH optical transport tester during three hours and eighteen minutes.

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

High resolution interrogation technique based on linear photodiode array spectrometer for fiber Bragg grating Sensors - art. no. 65952C

A linear photodiode array spectrometer based, high resolution interrogation technique for fiber Bragg grating sensors is demonstrated. Spline interpolation and Polynomial Approximation Algorithm (PAA) are applied to the data points acquired by the spectrometer to improve the original PAA based interrogation method. Thereby fewer pixels are required to achieve the same resolution as original. Theoretical analysis indicates that if the FWHM of a FBG covers more than 3 pixels, the resolution of central wavelength shift will arrive at less than 1 pm. While the number of pixels increases to 6, the nominal resolution will decrease to 0.001 pm. Experimental result shows that Bragg wavelength resolution of similar to 1 pm is obtained for a FBG with FWHM of similar to 0.2 nm using a spectrometer with a pixel resolution of similar to 70 pm.

Investigation on pressure sensitivity of fiber optic mandrel hydrophone - art. no. 659544

Pressure sensitivity of the fiber optic mandrel hydrophone is analyzed in this paper. Based on the theory of elasticity, the mechanism of the pressure response is studied. The influence of the optical fiber on the compliant mandrel on the pressure response is taken into consideration for the first time. The radial deformation of the mandrel under the pressure of the fiber optic and the underwater pressure is analyzed in details. Based on the theory of photo-elasticity, the phase shift of the Mach-Zehnder interferometer is given. The pressure sensitivity is evaluated both theoretically and experimentally, and the results show a good correlation between the theoretical and experimental results.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

中国煤中22种环境敏感微量元素的地球化学研究

本论文按照统一的采样和统一的分析测试方法对全国煤中22种环境敏感微量元素及全硫含量进行了系统的研究。通过统计学的方法不仅给出了中国煤炭部分环境敏感微量元素的分布范围、算术均值、标准差、几何均值、几何偏差，中位数，而且首次给出了95％置信度下算术均值、几何均值以及元素含量分布的置信区间等，并与前人大量样品的统计结果进行比较。还通过统计分析了部分环境敏感微量元素在我国煤中的主要赋存状态，以及选煤对这部分微量元素的脱除机理和脱除效果等，得到以下几点认识： 1. 通过与前人大量样品统计所得到的结果进行比较，进一步证明了论文中使用的这批样品是中国煤炭平均化学成分的良好代表。本次所分析的23种元素中，As、Be、Co、Cr、Cu、Hg、Pb、Se、Th、Tl、U、F、S等13元素与前人数10年研究的统计结果在分布范围、均值含量等上非常一致，但本次的结果更为可信，更接近中国煤炭平均化学成分的真实状况。此外，本次对这B、Sn这2种元素的分析数据也是目前反映我国煤中分布最具有代表性的数据。 2. 根据样品的无偏性，对平均值的置信区间进行计算。首次给出了全国煤中各元素在95％置信度下的算术均值的置信区间、几何均值的置信区间以及元素含量分布的置信区间等。可以为后人研究各元素在绝大多数煤中的含量及均值情况时作为参考。同时统计分析表明，按照95％置信度计算，16元素的真实平均值在我们所得到的平均值±11％范围之内，最大偏差为硒，在±20％之间。 3. 平均值作为最常用的统计量之一，中国煤中不同元素的不同均值之间有一定的差异，反映了元素在煤中不同的分布状态。论文中通过对23种元素在全国煤中的5种不同的均值比较，一般元素的产量加权均值与总体样品均值之间都比较接近；绝大多数元素的储量加权均值比较低，这与西北、华北地区未开采利用的煤炭资源量大，煤质好有关。 4. 通过与Swaine（1990）给出世界煤中元素的分布范围进行比较，22种环境敏感微量元素在我国煤中的分布处于世界煤的有限范围之内。其中，Cr、Cu、Mn、Mo、Se、Sn、Th、Tl、U、V、F等微量元素在我国煤中的分布与世界煤比较接近，而As、B、Ba、Be、Cd、Co、Cl、Hg、Ni、Pb、Sb等微量元素在我国煤中较世界煤低很多。 5. 与世界主要煤炭资源大国和Swaine（1990）给出的世界煤元素均值含量的比较显示，大部分环境敏感微量元素在我国煤中的均值含量与世界主要煤炭资源大国煤中的均值含量也比较接近。其中，我国煤中B、Co、Cu、Hg、Pb、U等6种元素含量均值与美国煤比较接近，As、Cd、Sb、Tl等4种元素含量均值与澳大利亚煤比较接近，Ba、Cr、Mo、Ni、V等4种元素含量均值与前苏联煤比较接近，Be、Mn、Se、Th、F等5种元素含量均值与世界煤比较接近。 6. 随着煤炭变质程度的增高，各元素均值含量没有表现出明显规律性的增高或降低。但22种环境敏感微量元素在褐煤、弱粘煤、不粘煤、气煤等较低变质程度煤中的含量整体水平不高，绝大多数微量元素主要在中高变质程度煤中较为更为富集。不同成煤时期以及不同聚煤区煤中各种环境敏感微量元素不同的富集程度，从总体上反应了绝大部分环境敏感微量元素在华南煤中更为富集，而占全国储量3/4的华北和西北煤中的总体水平相对较低。 7. 通过对环境敏感微量元素与灰分及主要灰成分之间的关系进行分析，初步了解了它们在煤中的主要赋存状态。煤中绝大部分环境敏感微量元素还是具有非常明显的无机亲和性，在煤中主要以矿物无机形态存在。主要与粘土矿物、黄铁矿及硫化物相结合，而与碳酸盐矿物关系不大。 8. 脱除率的分析显示，15种元素的脱除率与灰分的脱除率之间具有显著的正相关性，说明煤中绝大部分环境敏感微量元素主要以无机形态存在，因此提高原煤入洗率，降低原煤灰分的同时也可以在很大程度上降低环境敏感微量元素的燃煤排放。 9. 部分环境敏感元素的脱除率受到其在煤中的赋存状态、矿物形态、煤级以及选煤厂洗选工艺等诸多因素的影响，在不同样品中脱除率的差异较大。某些样品中微量元素的脱除率较高，最高脱除率可达到70％以上。从平均脱除率来看，灰分、硫分及绝大多数环境敏感微量元素处于30％－70％之间，只有少数几个元素不到20％。