1.58 mu m InGaAs quantum well laser on GaAs
Data(s) |
2007
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Resumo |
We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Tangring, I ; Ni, HQ ; Wu, BP ; Wu, DH ; Xiong, YH ; Huang, SS ; Niu, ZC ; Wang, SM ; Lai, ZH ; Larsson, A .1.58 mu m InGaAs quantum well laser on GaAs ,APPLIED PHYSICS LETTERS,2007 ,91(22): Art. No. 221101 |
Palavras-Chave | #半导体器件 #DOT LASERS #GROWTH |
Tipo |
期刊论文 |