东方红-75拖拉机车架在垂直非对称载荷作用下的内力分布和翘曲变形

本文采用结构矩阵分析力法,对东方红-75拖拉机车架在受到翘曲变形时的内力进行了计算与分析,系统的研究了当结构参数改变时车架内力分布的变化规律。以及该种车架强度和刚度不足的主要原因。提出了改进车架强度和刚度的实施办法。

结构弛豫对Zr_(64.13)Cu_(15.75)Ni_(10.12)Al_(10)块体非晶合金硬度和剪切带特征的影响

通过接近玻璃转变温度的等温退火获得不同弛豫状态的Zr64.13Cu15.75Ni10.12Al10块体非晶合金样品。利用维氏显微硬度计和洛氏硬度计研究结构弛豫对合金硬度和压痕周围剪切带特征的影响规律。结果表明:在590K等温退火处理使Zr64.13Cu15.75Ni10.12Al10块体非晶合金发生焓弛豫行为,其维氏显微硬度随退火时间的延长较快增加后趋于稳定,而大载荷洛氏硬度对结构弛豫不敏感。通过洛氏压痕周围剪切带特征的研究,定量比较了结构弛豫对剪切带间距、数量的影响规律。

75 mW robust single frequency Yb-doped DFB fiber Bragg grating laser

Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

Bending of jets in the QSO NRAO 530

We present radio images of NRAO 530 on scales ranging from pc to kpc. The observations include the EVN at 5 GHz, the VLBA at 1.6, 8.6 and 15 GHz, the MERLIN at 1.6 and 5 GHz, and the VLA at 5, 8.4, 15, 22, and 43 GHz. The VLBI images show a core-jet structure with an oscillating trajectory on a scale of about 30 mas north of the strongest compact component (core). Superluminal motions are detected in five of the jet components with apparent velocities in the range of 13.6 to 25.2c. A new component is detected at 15 GHz with the VLBA observations, which appears to be associated with the outburst in 2002. Significant polarized emission is detected around the core with the VLBA observations at 15 GHz. Rapid variations of the polarization intensity and angle are found between the epochs in 2002 and 2004. On the kpc-scale, a distant component (labelled as WL) located 11 aresec west (PA=-86 degrees) of the core is detected beyond the core-jet structure which extended to several hundreds of mas in the north-west direction (-50 degrees). A significant emission between the core-jet structure and the WL is revealed. A clump of diffuse emission (labelled EL, 12 arcsec long) at PA 70 degrees to the core, is also detected in the VLA observations, suggesting the presence of double lobes in the source. The core component shows a flat spectrum, while the distant components WL and EL have steep spectra. The steep spectra of the distant components and the detection of the arched emission suggest that the distant components are lobes or hot-spots powered by the core of NRAO 530. The morphologies from pc- to kpc-scales and the bending of jets are investigated. The observed radio morphology from pc to kcp appears to favor the model in which precession or wobbling of the nuclear disk drives the helical motion of the radio plasma and produces the S-shaped structure on kpc scale.

我国半干旱地区天然草地退化的原因及恢复技术初探

我国半干旱地区天然草地退化面积占75%-95%[1],由于生态环境的脆弱和人类不合理的利用,加之受全球气候变化等因素的影响,半干旱地区出现不同程度的退化现象。分析了退化原因并提出了全面保护天然草地、合理放牧、合理割草、对退化某地的恢复、人工草地建设、草地改良、控制虫鼠危害、特色植物资源加工与利用、建立家庭牧场生产模式等九项防治及恢复措施。

Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光

由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si_(1-x) Ge_x虚衬底上外延应变补偿的Si/S_(1-y) Ge_y(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上.在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%.在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.