31 resultados para 380109 Psychological Methodology, Design and Analysis

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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In this paper, a refractive index pro. le design enabling us to obtain a. at modal field around the fibre centre is investigated. The theoretical approach for designing such multilayer large flattened mode (LFM) optical fibres is presented. A comparison is made between the properties of a three-layer LFM structure and a standard step-index pro. le with the same core size. The obtained results indicate that the effective area of the LFM fibre is about twice as large as that of the standard step-index fibre, but the LFM fibre has less effective ability to filter out the higher order modes than the standard step-index fibre with the same bending radius.

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A theoretical study on 1.3 mu m GaAs-based quantum dot vertical-cavity surface-emitting lasers (VCSELs) was made. Investigation of the influence of VCSELs on the optical confinement factors and the optical loss and the calculation of the material gain of the assembled InGaAs/GaAs quantum dots. Analysis of the threshold characteristic was made and the multi-wavelength cavity and multilayer quantum-dot stack structure is found to be more suitable for quantum dot VCSELs.

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Used in chirped-pulse amplification system and based on multi-layer thin film stack, pulse compressor gratings (PCG) are etched by ion-beam and holographic techniques. Diffraction efficiency and laser-induced damage threshold rely on the structural parameters of gratings. On the other hand, they depend greatly on the design of multi-layer. A theoretic design is given for dielectric multi-layer, which is exposed at 413.1 nm and used at 1053 nm. The influences of coating design on optical characters are described in detail. The analysis shows that a coating stack of H3L (H2L) (boolean AND) 9H0.5L2.01H meets the specifications of PCG well. And there is good agreement of transmission between experimental and the theoretic design. (c) 2005 Elsevier GmbH. All rights reserved.

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:02:20Z No. of bitstreams: 1 Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.pdf: 239163 bytes, checksum: 82db1386c266d0c07442a972348da08c (MD5)

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A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

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Thin films of four nickel(II) and copper(II) hydrazone complexes, which will hopefully be used as recording layers for the next-generation of high-density recordable disks, were prepared by using the spin-coating method. Absorption spectra of the thin films on K9 optical glass substrates in the 300-700 nm wavelength region were measured. Optical constants (complex refractive indices N) and thickness d of the thin films prepared on single-crystal silicon substrates in the 275-675 nm wavelength region were investigated on a rotating analyzer-polarizer scanning ellipsometer by fitting the measured ellipsometric angles (Psi(lambda) and Delta(lambda)) with a 3-layer model (Si/dye film/air). The dielectric functions epsilon and absorption coefficients alpha as a function of the wavelength were then calculated. Additionally, a design to achieve high reflectivity and optimum dye film thickness with an appropriate reflective layer was performed with the Film Wizard software using a multilayered model (PC substrate/reflective layer/dye film/air) at 405 nm wavelength.

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Aeromonas hydrophila and Vibrio fluvialis are the causative agents of a serious haemorrhagic septicaemia that affects a wide range of freshwater fish in China. In order to develop a bivalent anti-A. hydrophila and anti-V. fluvialis formalin-killed vaccine to prevent this disease, an orthogonal array design (OAD) method was used to optimize the production conditions, using three factors, each having three levels. The effects of these factors and levels on the relative per cent survival for crucian carp were quantitatively evaluated by analysis of variance. The final optimized formulation was established. The data showed that inactivation temperature had a significant effect on the potency of vaccine, but formalin concentration did not. The bivalent vaccine could elicit a strong humoral response in crucian carp (Carassius auratus L.) against both A. hydrophila and V. fluvialis simultaneously, which peaked at 3 or 5 weeks respectively. Antibody titres remained high until week 12, the end of the experiment, after a single intraperitoneal injection. The verification experiment confirmed that an optimized preparation could provide protection for fish at least against A. hydrophila infection, and did perform better than the non-optimized vaccine judged by the antibody levels and protection rate, suggesting that OAD is of value in the development of improved vaccine formulations.

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Finite difference time domain (FDTD) method is used for the simulation and analysis of electromagnetic field in the top coupling layer of GaAs/AlGaAs quantum well infrared photodetector (QWIP). Simulation results demonstrated the coupling efficiencies and distributions of electromagnetic (EM) field in a variety of 2D photonic crystal coupling layer structures. A photonic crystal structure for bi-color-QWIP is demonstrated with high coupling efficiency for two wavelengths.

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In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology.

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This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

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A new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.