Design and Realization of Resonant Tunneling Diodes with New Material Structure
| Data(s) |
2005
|
|---|---|
| Resumo |
A new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs. 国家重点基础研究专项经费,中国科学院资助项目 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang Jianlin;Wang Liangchen;Zeng Yiping;Liu Zhongli;Yang Fuhua;Bai Yunxia.Design and Realization of Resonant Tunneling Diodes with New Material Structure,半导体学报,2005,26(1):1-5 |
| Palavras-Chave | #微电子学 |
| Tipo |
期刊论文 |
