Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator


Autoria(s): Yin XJ (Yin Xiaojie); Wu YD (Wu Yuanda); Hu XW (Hu Xiongwei)
Data(s)

2009

Resumo

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:02:20Z No. of bitstreams: 1 Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.pdf: 239163 bytes, checksum: 82db1386c266d0c07442a972348da08c (MD5)

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:02:20Z No. of bitstreams: 1 Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.pdf: 239163 bytes, checksum: 82db1386c266d0c07442a972348da08c (MD5)

其它

Identificador

http://ir.semi.ac.cn/handle/172111/11267

http://www.irgrid.ac.cn/handle/1471x/66081

Idioma(s)

英语

Fonte

Yin XJ (Yin Xiaojie), Wu YD (Wu Yuanda), Hu XW (Hu Xiongwei).Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.见:8th Pacific Rim Conference on Lasers and Electro-Optics.Shanghai, PEOPLES R CHINA.AUG 30-SEP 03, 2009.

Palavras-Chave #光电子学
Tipo

会议论文