Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Upconversion emission in Er3+ doped novel bismuthate glass

Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Omega(t)(t = 2, 4, 6) were found to be Omega(2) = 3.27 x 10(-20) cm(2), Omega(4) = 1.15 x 10(-20) cm(2), and Omega(6) = 0.38 x 10(-20) cm(2). The oscillator strength, the spontaneous transition probabilities, the fluorescence branching ratios, and excited state lifetimes were also measured and calculated. The upconversion emission intensity varies with the power of infrared excitation intensity. A plot of log I-up vs log I-IR yields a straight line with slope 1.86, 1.88 and 1.85, corresponding to 525, 546, and 657 nm emission bands, respectively, which indicates that a two-photon process for the red and green emission.

The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

Projectile fragmentation of Kr-86 at 64 MeV/nucleon

We measured fragmentation cross sections produced using the primary beam of Kr-86 at 64 MeV/nucleon on Be-9 and Ta-181 targets. The cross sections were obtained by integrating the momentum distributions of isotopes with 25 <= Z <= 36 measured using the RIPS fragment separator at RIKEN. The cross-section ratios obtained with the Ta-181 and Be-9 targets depend on the fragment masses, contrary to the simple geometrical models. We compared the extracted cross sections to EPAX; an empirical parametrization of fragmentation cross sections. Predictions from current EPAX parametrization severely overestimate the production cross sections of very neutron-rich isotopes. Attempts to obtain another set of EPAX parameters specific to the reaction studied here to extrapolate the neutron-rich nuclei more accurately have not been very successful, suggesting that accurate predictions of production cross sections of nuclei far from the valley of stability require information of nuclear properties that are not present in EPAX.

黄土丘陵区土壤团聚体分形特征及其对植被恢复的响应

采用计算分形维数的方法,对黄土丘陵区典型草原带土壤团聚体的分形特征及其对植被恢复的响应进行研究。结果表明:1)在植被恢复初期,土壤>10 mm粒级的团聚体含量在0~20和20~40 cm层次均较高,含量为331.4~525.6 g/kg。随植被恢复年限增加,10~7、7~5、5~3、3~2、2~1 mm粒级的团聚体绝对含量下降差异不明显。1~0.5、0.5~0.25和<0.25 mm小粒级土壤团聚体含量,在植被恢复初期(7 a)较高。2)随着植被恢复年限增加,土壤>5 mm粒级的水稳性团聚体含量相对下降很快,恢复7 a之后,大粒级土壤团聚体表现为上层含量比下层含量低的趋势。相对于干筛结果而言,土壤水稳性团聚体的粒径分布更为均匀、稳定,恢复7 a之后的土壤>0.25mm团聚体含量占到40%~50%,而>5 mm的土壤团聚体则占10%~23%。植被恢复过程中,土壤团聚体由大的团块向小颗粒的土壤团聚体转换,粒径分布更为均匀,土壤结构逐渐改善。3)不同恢复年限土壤团聚体分形维数变化范围为表层2.75~2.86,表下层2.77~2.89,变化范围小,20~40 cm土层的分形维数大于0~20 cm,恢复植被可使土壤分形...

Synthesis, reactive mechanism and thermal stability of W1-xAlxC (x=0.33, 0.5, 0.75, 0.86) nanocrystalline

W1-xAlxC (x = 0.33, 0.50, 0.75, 0.86) solid solutions have been synthesized directly by ball-milling tungsten powder, aluminum powder and activated carbon. The structural development of W0.5Al0.5C phase with the milling times up to 160 h has been followed using X-ray diffraction. X-ray photoelectron spectra demonstrate that Al atom takes the place of W. High temperature annealing experiment reveals that Al is stable in hexagonal structure to 1873 K. Transmission electron microscopy image shows that the grain size of the prepared powders is about 5 nm.