246 resultados para atomic resolution


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Multi-frame image super-resolution (SR) aims to utilize information from a set of low-resolution (LR) images to compose a high-resolution (HR) one. As it is desirable or essential in many real applications, recent years have witnessed the growing interest in the problem of multi-frame SR reconstruction. This set of algorithms commonly utilizes a linear observation model to construct the relationship between the recorded LR images to the unknown reconstructed HR image estimates. Recently, regularization-based schemes have been demonstrated to be effective because SR reconstruction is actually an ill-posed problem. Working within this promising framework, this paper first proposes two new regularization items, termed as locally adaptive bilateral total variation and consistency of gradients, to keep edges and flat regions, which are implicitly described in LR images, sharp and smooth, respectively. Thereafter, the combination of the proposed regularization items is superior to existing regularization items because it considers both edges and flat regions while existing ones consider only edges. Thorough experimental results show the effectiveness of the new algorithm for SR reconstruction. (C) 2009 Elsevier B.V. All rights reserved.

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Ultrahigh-resolution fiber-optic image guides-fused image fiber, faceplate, and taper-were fabricated by using microstructured polymer optical fiber (MPOF) preforms composed of two polymers: polymethylmethacrylate and polystyrene. The pixel diameter in the resultant MPOF-based image guides was as small as 3 mu m. The imaging capabilities of these types of fiber-optic elements were demonstrated. (C) 2009 Optical Society of America

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The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1-2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

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Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.

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A new method of differentiating the deep level transient spectroscopy (DLTS) signal is used to increase the resolution of conventional DLTS. Using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional DLTS, can be distinguished. A series of lattice-mismatched InxGa1-xP samples are measured by improved DLTS to determine accurately the activation energy of a lattice-mismatch-induced deep level. This level cannot be clearly determined using conventional DLTS because the two signals partly overlap each other. Both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect.