The status and causes of alien species invasion in China

Data of classification, origin, pathway and environmental impacts of invasive alien micro-organisms, invertebrates, amphibians and reptiles, fish, birds, mammals, weeds, trees, and marine organisms in terrestrial, aquatic and marine ecosystems of China, were analyzed, based on literature retrieval, field survey and consultation. Some 283 invasive alien species were recorded in China, including 19 invasive alien micro-organisms, 18 aquatic plants, 170 terrestrial plants, 25 aquatic invertebrates, 33 terrestrial invertebrates, 3 amphibians and reptiles, 10 fish, and 5 mammals. Of the invasive alien species, 55.1% originated from North and South America, 21.7% from Europe, 9.9% from Asia, 8.1% from Africa and 0.6% from Oceania. Many institutions and individuals in China lack adequate knowledge of ecological and environmental consequences caused by invasive alien species, with some ignorance of the dangerous invasion in the introduction of alien species. For instance, 50.0% of invasive alien plants were intentionally introduced as pasture, feedingstuff, ornamental plants, textile plants, medicinal plants, vegetables, or lawn plants, 25% of alien invasive animals were intentionally introduced for cultivation, ornament, or biological control, In addition, more efforts are being made in the introduction of alien species, and little attention is paid on the management of introduced alien species, which may cause their escape into natural environment and potential threats to the environment. There were also gaps in quarantine system in China. All microorganisms were unintentionally introduced, through timber, seedling, flowerpot, or soil; 76.3% of alien invasive animals invaded through commodity or transportation facility because of the failure of quarantine. Therefore, quarantine measures should be strictly implemented; and meanwhile the intentional introduction of alien species should be strictly managed and a system of risk assessment should be implemented.

Acrossocheilus spinifer, a new species of barred cyprinid fish from south China (Pisces : Teleostei)

Acrossocheilus spinifer sp. nov. is described from the river basins in Fujian Province and the Han Jiang basin in Guangdong Province, south China. It is one of the barred Acrossocheihis species sharing five or six vertical bars on the flanks, with each bar being two scales in width. Acrossocheilus spinifer sp. nov. is morphologically most similar to Acrossocheilus wenchowensis. but distinguished from it by: a colour pattern of all vertical bars extending ventrally to the second scale row below the lateral line, and having the second bar placed posterior to the base of the last simple dorsal-fin ray, a blunt snout; and a stout, last simple dorsal-fin ray. Acrossocheilus spinifer sp. nov. resembles Acrossocheilus kreyenbergii and Acrossocheilus stenotaeniatus with which it shares a stout, last simple dorsal-fin ray with a serrated posterior edge, but is separated from both species by having a narrow median interruption in the lower lip, a lower jaw fully covered by the lower lip when viewed ventrally and the second vertical bar placed posterior to the base of the last simple dorsal-fin ray. The absence of a longitudinal stripe extending along the lateral line on the flanks in males readily distinguishes A. spinifer sp. nov. from Four other species, namely Acrossocheilus fasciatus, Acrossocheilus paradoxus, Acrossocheilus parallens, and Acrossocheilus jishouensis. (c) 2006 The Authors Journal compilation (c) 2006 The Fisheries Society of the British Isles.

The research of phosphorus of Xiangxi River nearby the Three Gorges, China

The Xiangxi River is the first middling tributary of the Changjiang River near the Three Gorges Dam. The River is subject to phosphorus pollution mainly from industrial wastewater. As the water quality of the Xiangxi River could directly influence the water quality of the Three Gorges Reservoir, the research on phosphorus levels and its change in the sediment profile of the Xiangxi River could provide useful information in the dynamic changes in the system, thereby offering options for mitigative measures. Water and sediment samples from lower reaches of Xiangxi River were collected and the different forms of phosphorus in sediments of the Xiangxi River were studied. The concentrations of total phosphorus in sediment ranged from 757.67 to 1438.54 mg/kg. Inorganic phosphorus concentrations ranged from 684.63 to 1055.58 mg/kg. Phosphorus contamination was serious in some parts of the Xiangxi River. With an average concentration of 635.17 mg/kg, calcium-bound phosphorus is the main form among different inorganic phosphorus forms. Labile phosphorus and iron/aluminum-bound phosphorus measured 3.40, 0.05and 35.28 mg/kg, respectively. The mobilization potential of phosphorus of sediments was studied through adsorption and release experiments. The equilibrium concentration of phosphorus adsorption and release was around 0.1 mg/L. The initial concentrations of phosphorus in the overlying water and the sediments have obvious effect on phosphorus mobilization potential. In addition, the release rate of phosphorus in sediment increased with water depth.

Toxicity of cypermethrin on growth, pigments, and superoxide dismutase of Scenedesmus obliquus

Cypermethrin is a synthetic pyrethroid that is particularly toxic to crustaceans. It is therefore applied as a chemotherapeutant in farms for the treatment of pests. The effective concentrations of cypermethrin on the inhibition of Scenedesmus ohliquus growth at 96h (96h EC50) were determined to be 50, 100, 150, 200, and 250mg/L. Algal growth, pigment fractions, and the activity of superoxide dismutase (SOD) in the algal cells were measured in the exponential phase after exposure to cypermethrin. The results show that higher concentration of cypermethrin is inhibitory for growth and other metabolic activities and the 96h EC50 of cypermethrin to S. ohliquus is 112 +/- 9 mg/L; the potential application of SOD activity in S. ohliquus as a sensitive biomarker for cypermethrin exposure is also discussed. (C) 2004 Elsevier Inc. All rights reserved.

Toxicity of cypermethrin to Daphnia magna HB

The acute toxic effect of the pesticide cypermethrin to Daphnia magna HB was examined. D. magna HB was exposed to cypermethrin at concentrations of 0, 1, 3, 5, 7, and 9 mg/L for 24 In. Data showed that the 24 h-LC50 of cypermthrin on D. magna HB was 4.81 mg/L. In contrast, the 24 h-LC50 of K2Cr2O7 (the national standard toxicant) to Daphnia magna was 0.38 mg/L in the current study. Results indicated that the Daphnia magna was very sensitive to pesticides. In addition, the effects of the culture condition(such as hardness, temperature and DO etc.) on Daphnia magna HB was also studied.

HLA-DRB1 allele polymorphisms in genetic susceptibility to esophageal carcinoma

AIM: To probe into the genetic susceptibility of HLA-DRB1 alleles to esophageal carcinoma in Han Chinese in Hubei Province. METHODS: HLA-DRB1 allele polymorphisms were typed by polymerase chain reaction with sequence-specific primers (PCR-SSP) in 42 unrelated patients with esophageal cancer and 136 unrelated normal control subjects and the associated HLA-DRB1 allele was measured by nucleotide sequence analysis with PCR.SAS software was used in statistics. RESULTS: Allele frequency (AF) of HLA-DRB1*0901 was significantly higher in esophageal carcinoma patients than that in the normal controls (0.2500 vs0.1397, P=0.028, the odds ratio 2.053, etiologic fraction 0.1282). After analyzed the allele nucleotide sequence of HLA-DRB1*0901 which approachs to the corresponded exon 2 sequence of the allele in genebank. There was no association between patients and controls in the rested HLA-DRB1 alleles. CONCLUSION: HLA-DRB1*0901 allele is more common in the patients with esophageal carcinoma than in the healthy controls, which is positively associated with the patients of Hubei Han Chinese. Individuals carrying HLA-DRB1*0901 may be susceptible to esophageal carcinoma.

Microcalorimetric studies on the thermogenesis of energy release of mitochondria isolated from rice

After isolation from rice mitochondria still have activity and can live for a long time by using its stored nutrients. The thermogenesis curves of energy release of the mitochondria isolated from variant strains of rice have been determined by using an LKB2277 bioactivity monitor. The differences in shape of the curves and the thermodynamic and kinetic characteristics of the thermogenesis of the mitochondria have been compared. The thermodynamic and kinetic parameters of energy release of the mitochondria in the thermogenesis increasing stage have been calculated, and the experimental thermokinetic equations of the thermogenesis have been established. (C) 2001 Elsevier Science B.V. All rights reserved.

Studies on the energy release of rice mitochondria under different conditions by means of microcalorimetry

The thermodynamic and kinetic behaviors of energy release of mitochondria isolated from rice (Oryza sative L.) were studied by using a LKB 2277 Bioactivity Monitor under different conditions. The thermogenesis curves of energy release of the rice mitochondria (which had been kept at 0-3 degreesC for 15 h and 40 day before the determination) were determined respectively at 25 and 30 degreesC, and the difference in shape of the thermogenesis curves and thermodynamic and kinetic characteristics were compared. The thermodynamic and kinetic parameters of energy release of the mitochondria in the thermogenesis increasing stage have been calculated, and the experimental thermokinetic equations of the thermogenesis have been established. The results indicated that the lower the temperature, the slower the energy release of the rice mitochondria. Both the thermogenesis and the energy release late of the rice mitochondria increased after the mitochondria was kept at lower temperature for 40 days. One can use the methods to characterize the ability of the rice mitochondria to release energy under different conditions. (C) 2001 Published by Elsevier Science B.V.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%-20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5 eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Electronic structure and optical properties of GaN with Mn-doping

Calculations of the electronic structure and the density of states of GaN with Mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. The results reveal a 100% spin polarized impurity band in band structure of Ga1-xMnxN due to hybridization of Mn 3d and N 2p orbitals. The material is half metallic and suited for spin injectors. In addition, a peak of refractive index can be observed near the energy gap. The absorption coefficient increases in the UV region with the increase of the Mn content.

Spin states and persistent currents in a quantum ring with an embedded magnetic impurity

Spin states and persistent currents are investigated theoretically in a quantum ring with an embedded magnetic ion under a uniform magnetic field including the spin-orbit interactions. The magnetic impurity acts as a spin-dependent delta-potential for electrons and results in gaps in the energy spectrum, consequently suppressing the oscillation of the persistent currents. The competition between the Zeeman splittings and the s-d exchange interaction leads to a transition of the electron ground state in the ring. The interplay between the periodic potential induced by the Rashba and Dresselhaus spin-orbit interactions and the delta-potential induced by the magnetic impurity leads to significant variation in the energy spectrum, charge density distribution, and persistent currents of electrons in the ring.