Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%-20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5 eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.

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Made available in DSpace on 2010-04-22T13:38:45Z (GMT). No. of bitstreams: 1 Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition.pdf: 1489770 bytes, checksum: 6862fc33ed45faa049eff6675c001d09 (MD5) Previous issue date: 2010

National Natural Science Foundation of China 60776047 60506001 60476021 60576003 60836003

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National Natural Science Foundation of China 60776047 60506001 60476021 60576003 60836003