4 * 4区域调制多模干涉耦合器SOI光波导开关的设计

根据区域调制多模干涉耦合器光开关的工作原理，以2 * 2区域调制多模干涉光开关为基础，采用级联的方式设计了4 * 4区域调制多模干涉SOI光波导开关。用有限差分二维BPM方法模拟了器件在不同工作状态下的光场传输情况。器件工作波长为1.55 μm，在不计耦合损耗时器件的平均插入损耗小于2.0 dB/cm。

估算SOI单模脊形弯曲波导最小弯曲半径的简单方法

采用有效折射率方法计算了SOI弯曲波导由于辐射损耗引起模式截止的最小弯曲半径，得到了一个估算弯曲波导的最小弯曲半径的解析表达式。

SOI及GeSi/Si脊形光波导的模式与波导几何结构

用有效折射率方法对SOI(绝缘体上硅)及GeSi/Si脊形光波导的单模条件进行了模拟，与Soref的单模条件进行了比较，将两者与实验结果进行了比较，得到了与实验结果符合得非常好的单模条件。同时对多模波导进行了模拟，得到了波导承载一阶和二阶模的条件。

一种新型的SOI灵敏放大器

于2010-11-23批量导入

部分耗尽CMOS/SOI工艺

对部分耗尽CMOS/SOI工艺进行了研究，成功地开发出成套部分耗尽CMOS/SOI抗辐照工艺。其关键工艺技术包括

SOI- Based 3dB MMI Splitter

国家自然科学基金

SOI集成光电子器件

Silicon-on-insulator (SOI)集成光电子器件的工艺与标准CMOS工艺完全兼容，采用SOI技术可以实现低成本的整片集成光电子回路。文章回顾了近几年来SOI集成光电子器件的发展以及一些最新的研究进展。

非对称全内反射型SOI波导开关器件模型分析

根据有效折射率法和光束传播法分析了大截面单模SOI脊形X型交叉波导的传输特性.指出交叉角在1.5-2°内,因导波模式引起耦合作用而导致的串音小于-25dB;采用波动光学原理分析了非对称全内反射开关导模的传输和反射特性;讨论了等离子体色散效应,pn结大注入效应以及Goos-Hanchken位移,并分析了非对我全内反射型SOI光波导开关的电学性质.据此优化设计了该器件的结构参数和电学参数.

利用能量过滤成像技术对注氮SOI的研究

于2010-11-23批量导入

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.