Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究

其它基金

GaAs-Al_xGa_(1-x)As异质结的热电子磁声子共振测量

国家自然科学基金

瞬态C-V方法对Al_xGa_(1-x)As中DX中心的研究

于2010-11-23批量导入

MBE[（GaAs）l（Ga（1-x）AlxAs）m]n/GaAs（001）一维超晶格的X射线双晶...

于2010-11-23批量导入

AlxGa（1-x）As/GaAs异质结界面上二维电子气量了霍耳效应的测量

于2010-11-23批量导入

InxGa（1-x）As/GaAs应变单量子阱结构的静压光致发光研究

国家自然科学基金

不同剂量C离子注入Si单晶中Si_(1-x)C_x合金的形成及其特征

室温下在单晶Si中注入 (0 6— 1 5 ) %的C原子 ,利用高温退火固相外延了Si1-xCx 合金 ,研究了不同注入剂量下Si1-xCx 合金的形成及其特征 .如果注入C原子的浓度小于 0 6 % ,在 85 0— 95 0℃退火过程中 ,C原子容易与注入产生的损伤缺陷结合 ,难于形成Si1-xCx 合金相 .随注入C原子含量的增加 ,C原子几乎全部进入晶格位置形成Si1-xCx 合金 ,但如果注入C原子的浓度达到 1 5 % ,只有部分C原子参与形成Si1-xCx 合金 .升高退火温度 ,Si1-xCx 合金相基本消失 .

C离子注入Si中Si_(1-x)C_x合金的形成及其稳定性

利用离子注入和高温退火的方法在Si中生长了C含量为0.6%~1.0%的Si1?xCx合金, 研究了不同注入剂量下Si1?xCx合金的形成及其在退火过程中的稳定性. 如果注入剂量小于引起Si非晶化的剂量, 850℃退火后, 注入产生的损伤缺陷容易与C原子结合形成缺陷团簇, 难于形成Si1?xCx合金. 随着注入C离子剂量的增大, 注入产生的损伤增强, 容易形成Si1?xCx合金, 但注入的剂量增大到一定程度, Si1?xCx合金的应变将趋于饱和, 即只有部分C原子进入晶格位置形成合金相. Si1?xCx合金一旦形成, 在950℃仍比较稳定, 而温度高于1 000℃, 合金的应力将部分释放. 随着合金中C原子浓度的升高, 合金的稳定性变差.

A new 1D metal-organic coordination polymer with blue fluorescent emission: [Cd-2(1,10 '-phen)(2)(betc)(H2O)](n)

A new coordination polymer [Cd-2(1,10'-phen)(2)(betc)(H2O)](n) (1) (betc = benzene-1,2,4,5-tetracarboxylate, 1,10'-phen = 1,10'-phenanthroline) was hydrothermally synthesized from CdCl2.2.5H(2)O, H(4)betc and 1,10'-phen at 160 degreesC. It was characterized by IR, XPS, TG and single-crystal X-ray diffraction. Compound 1 possesses infinite chair-like chains which construct 3D framework through pi-pi interactions and the hydrogen bond interactions. The fluorescent spectrum study shows that compound 1 exhibits blue fluorescent emission in the solid at room temperature.

Sol-ogel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 <= x <= 1) phosphor films

Y2(1-x) Gd2xSiWO8 : A ( 0 <= x <= 1; A= Eu3+, Dy3+, Sm3+, Er3+) phosphor films have been prepared on silica glass substrates through the sol - gel dip-coating process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscope (AFM), scanning electron microscopy (SEM) and photoluminescence spectra as well as lifetimes were used to characterize the resulting films. The results of the XRD indicated that the films began to crystallize at 800 degrees C and crystallized completely at 1000 degrees C. The AFM and SEM study revealed that the phosphor films, which mainly consisted of closely packed grains with an average size of 90 - 120 nm with a thickness of 660 nm, were uniform and crack free. Owing to an efficient energy transfer from the WO42- groups to the activators, the doped lanthanide ion ( A) showed its characteristic f - f transition emissions in crystalline Y2(1-x) Gd2xSiWO8 (0 <= x <= 1) films. The optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 21, 5, 3 and 7 mol% of Y3+ in Y2SiWO8 films, respectively.

高功率镍氢电池La_(1-x)Mg_x(NiCoAl)_(3.6)金属氢化物电极的电化学性能研究

MH-Ni电池具有电化学比能量高、耐过充/放电性能好、无记忆效应和环境友好等优点而得到广泛应用.金属氢化物电极是MH-Ni电池的核心材料,其研究工作主要集中在稀土AB_5系、钛系、锆系和镁基等合金作为MH-Ni电池金属氢化物电极方面.但这些体系合金的电化学容量低,活化

La_(1-x)Pr_xP_5O_(14) 晶体的光谱性质

分析了室温下晶体在紫外、可见区的吸收、荧光和红外光谱,利用Judd Ofeld理论计算了PrPP和La0.2Pr0.8PP晶体中Pr3+的实验振子强度,PrPP和La0.2Pr0.8PP晶体中Pr3+离子振子强度变化不大,说明在该晶体中Pr3+的浓度猝灭效应较小。红外光谱和结构分析确定了晶体的结构为单斜晶系,并观察到Pr3+的3P0 3H6跃迁的红色发射很强。