The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Period Continuous Tuning of an Efficient Mid-Infrared Optical Parametric Oscillator Based on a Fan-out Periodically Poled MgO-Doped Lithium Niobate

We report a period continuously tunable, efficient, mid-infrared optical parametric oscillator (OPO) based on a fan-out periodically poled MgO-doped congruent lithium niobate (PPMgLN). The OPO is pumped by a Nd:YAG laser and a maximum idler output average power of 1.65 W at 3.93 mu m is obtained with a pump average power of 10.5 W, corresponding to the conversion efficiency of about 16% from the pump to the idler. The output spectral properties of the OPO with the fan-out crystal are analyzed. The OPO is continuously tuned over 3.78-4.58 mu m (idler) when fan-out periods are changed from 27.0 to 29.4 mu m. Compared with temperature tuning, fan-out period continuous tuning has faster tuning rate and wider tuning range.

Room-temperature dual-wavelength erbium-doped fibre laser based on a sampled fibre Bragg grating and a photonic Robin Hood

With the assistance of a kind of photonic Robin Hood that is originated from four-wave mixing in a dispersion-flattened high-nonlinearity photonic-crystal fibre, a novel dual-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated by using a sampled fibre Bragg grating. The experiments show that, due to the contribution of the photonic Robin Hood, the proposed fibre laser has the advantage of excellent uniformity, high stability and stable operation at room temperature. Our dual-wavelength EDF laser has the unique merit that the wavelength spacing remains unchanged when tuning the two wavelengths of laser, and this laser is simpler and more stable than the laser reported by Liu et al. [Opt. Express, 13 142 (2005)].

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

Thermoluminescence characteristics of rare-earth-doped LiCaBO3 phosphor

LiCaBO3 was synthesized by high-temperature solid-state reaction. The influence of different rare earth dopants, i.e. Dy3+, Tb3+. TM3+ and Ce3+, on thermoluminescence (TL) of LiCaBO3 phosphor was discussed. We studied the TL properties and some dosimetric characteristics of Ce3+-activated LiCaBO3 phosphor in detail. The effect of the concentration of Ce3+ on TL was investigated, the result of which showed that the optimum Ce3+ concentration was 1 mol%. The TL kinetic parameters of LiCaBO3:0.01 Ce3+ were studied by computer glow curve deconvolution (CGCD) method.

Room-temperature synthesis and luminescence properties of Eu3+/Tb3+-doped La(1,3,5-BTC)(H2O)(6)

The facile, rapid, and effective synthesis of coordination polymer La(1,3,5-BTC)(H2O)(6) has been realized via direct precipitation at room temperature. It is found that the crystal structure is of monoclinic, space group Cc. The doped Eu3+ or Tb3+ ions samples have the same phase and exhibit red and green emissions under UV light excitation, respectively.

A study on the near-infrared luminescent properties of xerogel materials doped with dysprosium complexes

A series of dysprosium complex doped xerogels with the same first ligand (acac = acetylacetone) and different neutral ligands were synthesized in situ via a sol-gel process. The Fourier transform infrared (FTIR) spectra, diffuse reflectance (DR) spectra, and near-infrared (NIR) luminescent properties of dysprosium complexes and dysprosium complex doped xerogels are described in detail. The results reveal that the dysprosium complex is successfully synthesized in situ in the corresponding xerogel. Excitation at the maximum absorption wavelength of the ligands resulted in the characteristic NIR luminescence of the Dy3+ ion, which contributes to the energy transfer from the ligands to the central Dy3+ ion in both the dysprosium complexes and xerogels via an antenna effect.

Relationship between charge transfer energies of Yb3+ and Sm3+ and crystal environmental factor

Relationship between charge transfer energies E-CT of Yb3+ and Sm3+ and environmental factors h(e) in various crystals was investigated using a dielectric chemical bond method. Both results show that they have an exponential relation E-CT = A+B exp(-kh(e)), but the exponential factors are different, which indicates that the interaction between the rare earth ions and environment is connected with the kind of rare earth ion. This result provides a method of determining charge transfer energies of Yb3+ and Sm3+ from a crystal structure.

Controlled Synthesis of Ln(3+) (Ln = Tb, Eu, Dy) and V5+ Ion-Doped YPO4 Nano-/Microstructures with Tunable Luminescent Colors

YPO4 nano/microcrystals with multiform crystal phases and morphologies, such as hexagonal nano/submicroprisms, spherical-like nanoparticles, and nanorods with different length/diameter ratios as well as tetragonal nanospindles, have been synthesized via a facile hydrothermal route. A series of controlled experiments indicate that the pH values in the initial solution, phosphorus sources, and the organic additive trisodium citrate (Cit(3-)) are responsible for crystal phase and shape determination of final products. It is found that Cit(3-) as a ligand and shape modifier has the dynamic effect by adjusting the growth rate of different facets under different experimental conditions, resulting in the formation of various geometries of the final products. The possible formation mechanisms for products with diverse architectures have been presented.

Solvothermal synthesis and luminescent properties of monodisperse LaPO4:Ln (Ln = Eu3+, Ce3+, Tb3+) particles

Monodisperse rare-earth ion (Eu3+, Ce3+, Tb3+) doped LaPO4 particles with oval morphology were successfully prepared through a facile solvothermal process without further hear treatment. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) spectra and the kinetic decays were performed to characterize these samples. The XRD results reveal that all the doped samples are well crystalline at 180 degrees C and assigned to the monoclinic monazite-type structure of the LaPO4 phase. It has been shown that all the as-synthesized samples show perfectly oval morphology with narrow size distribution. The possible growth mechanism of the LapO(4):Ln has been investigated as well.