The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy
Data(s) |
1998
|
---|---|
Resumo |
The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY .The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):287-290 |
Palavras-Chave | #半导体材料 #MOVPE #GaN #GaN Buffer #heavy Si-doping |
Tipo |
期刊论文 |