High-concentration hydrogen in unintentionally doped GaN
Data(s) |
1998
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Resumo |
We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY .High-concentration hydrogen in unintentionally doped GaN ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):566-569 |
Palavras-Chave | #半导体材料 #gallium nitride #gas source molecular beam epitaxy #hydrogen #autodoping #FILMS |
Tipo |
期刊论文 |