Preparation and characterization of erbium doped sol-gel silica glasses


Autoria(s): Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX
Data(s)

1999

Resumo

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

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SPIE.; Def Adv Res Projects Agcy.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

SPIE.; Def Adv Res Projects Agcy.

Identificador

http://ir.semi.ac.cn/handle/172111/13783

http://www.irgrid.ac.cn/handle/1471x/105073

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX .Preparation and characterization of erbium doped sol-gel silica glasses .见:SPIE-INT SOC OPTICAL ENGINEERING .RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1999,74-80

Palavras-Chave #半导体材料 #Er-doped silica glass #sol-gel process #photoluminescence #PLANAR WAVE-GUIDES #MOLECULAR-BEAM EPITAXY #CRYSTAL SILICON #IMPLANTED SI #LUMINESCENCE #ELECTROLUMINESCENCE #FABRICATION #IMPURITIES #FILMS #IONS
Tipo

会议论文