EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS

In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation.

High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

High efficiency AlxGa1-xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 X 2.3cm(2) epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AM0, 2.0 x 2.0cm(2)). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate

Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Frequency limitation in calibrating microwave test fixtures

The problem of frequency limitation arising in calibration of the test fixtures is investigated in this paper. It is found that at some frequencies periodically, the accuracy of the methods becomes very low, and. the denominators of the expressions of the required S-parameters approach zero. This conclusion can be drawn whether-the test fixtures, are symmetric or not. A good agreement between theory and experiment is obtained.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

厌氧产氢菌的分离筛选、诱变选育及其产氢特性的研究

本文从四川绵竹酒厂、成都市龙泉长安垃圾填埋场以及四川大学荷花池底的厌氧污泥中先后分离得到63株厌氧产氢菌，其中H-8、H-61、HC-10等16株产氢细菌产氢能力较高，HC-10的产氢能力最高，最大产氢量和最大产氢速率分别达到2840 ml H2/L培养基和25.39 mmol H2/g drycell·h，对HC-10进行生理生化鉴定和分子生物学鉴定，判定其为clostridium sp.，对HC-10的产氢条件进行了研究，结果表明，该菌的最适生长温度为35 ℃，最适生长初始pH为7，以葡萄糖为最佳碳源，以蛋白胨为最佳氮源，不利用无机氮源，其产氢发酵液相产物以乙醇和乙酸为主，其发酵类型属于乙醇型发酵。此外，以酒糟废液作为底物，进行了菌株HC-10的生物强化试验，研究表明，投加了HC-10的强化系统其产氢量比对照高出40.32%。 同时为了获得厌氧产氢菌的高效突变株，分别以产氢菌H-8和H-61为原始菌株进行微波诱变处理，对微波诱变参数进行了优化，考察了突变株的遗传稳定性、产氢特性及耐酸性。菌株H-8经过微波诱变得到5株高产氢突变株HW7、HW33、HW181、HW184、HW195，经多次传代表明HW195是稳定的高产突变株。突变株HW195具有较好的耐酸性，在pH值为2.8时仍能生长。通过间歇发酵实验，其最大产氢量和最大产氢速率分别达到2460 mL/L培养基和27.97 mmol H2/g drycell·h，比原始菌分别提高了50.75%和41.7%。菌株H-61经过微波诱变后选育得到的突变株HW-18，其最大产氢量和最大产氢速率分别达到2190 mL/L培养基和25.86 mmol H2/g drycell·h，比原始菌分别提高了23.03%和31.00%。 为了对比各种诱变方式对产氢菌产氢能力的影响，以厌氧产氢菌H-61为原始菌株，先后经亚硝基胍(NTG)、紫外(UV)诱变，选育得到1株高产突变株HCM-23。在葡萄糖浓度为10 g/L的条件下，其产氢量为3024 mL/L培养基，比原始菌株提高了69.89%；其最大产氢速率为33.19 mmol H2/g drycell·h，比原始菌株提高了68.14%。经过多次传代实验，稳定性良好。其发酵末端产物以乙醇和乙酸为主，属于典型乙醇型发酵。其最适产氢初始pH为6.5，最适生长温度为36 ℃，以蔗糖为最佳碳源。与原始菌株相比，突变株HCM-23的产氢特性发生了改变，如生长延滞期延长，可利用无机氮源等。 From anaerobic activated sludge, 16 strains of hydrogen producing bacteria were newly isolated. One of them named as HC-10 had the highest hydrogen producing capability, under the batch fermentative hydrogen production condition, the maximal hydrogen yield and hydrogen production rate was 2840 mL/L culture and 25.39 mmol H2/g drycell·h. It was identified as clostridium sp.HC-10 by 16S rDNA sequence analysis. Various parameters for hydrogen production, including substrates, initial pH and temperature, have been studied. The optimum condition for hydrogen producing of strain HC-10 were achieved as: initial pH 7.0, temperature 35 ℃, glucose as the favorite substrate, Moreover, using distiller's solubles wastewater as substrate, HC-10 strain was added in the biohydrogen producing system to research the bioaugmentation effection. The results showed that the hydrogen production of bioaugmentation system was 40.32% higher than the noaugmentation system. An anaerobic, hydrogen producing strain H-8 was irradiated by microwave to optimize the microwave mutagenesis condition, and to test the heredity, hydrogen-producing potential and aciduric of the mutants. An aciduric mutant named as HW195 with steady hydrogen-producing capability was obtained, which can grow at pH 2.8. Its capability of hydrogen production was tested in the batch culture experiments. The maximum hydrogen yield and hydrogen production rate was 2460 mL/L culture and 29.97 mmol H2/g drycell·h, which was 50.7% and 41.7% higher than those of the initial strain, respectively. When used the strain H-61 as original strain, a mutant named as HW18 was obtained. The maximum hydrogen yield and hydrogen production rate was 2190 mL/L culture and 25.86 mmol H2/g drycell·h, which was 23.03% and 31.00% higher than those of the initial strain, respectively. The results demonstrated that microwave mutagenesis could be used in the field of hydrogen producing microorganism. The hydrogen producing strain H-61 was used as an original strain which was induced by NTG and UV for increasing and the hydrogen production capability. One of the highest efficient H2-producing mutants was named as HCM-23 with its stable hydrogen production capability. which was tested in the batch culture experiments. With the condition of 10 g/L glucose, its cumulative hydrogen yield and hydrogen production rate was 3024 mL/L culture and 33.19 mmol H2/g drycell·h, 69.89％and 68.14％ higher than that of the original strain, respectively. The terminal liquid product compositions showed that the mutant HCM-23 fermentation was ethanol type, while the original strain H-61 fermentation was butyric acid type. Varieties of parameters of hydrogen production fermentation were studied, including time, carbon source, nitrogen source, glucose concentration, glucose utilization, initial pH and incubation temperature had been studied, indicated the optimum condition of hydrogen production for the mutant HCM-23 as initial pH6.5, temperature 36 ℃, and the favorite substrate was sucrose. The hydrogen production characters of the mutant and the original strain were different, such as, the growth lag phase and the utilization of inorganic nitrogen source, etc. This work shows a good application potential of NTG-UV combined mutation in the biohydrogen production. And the hydrogen production mechanism and metabolic pathway should be explored furthermore.

Raman Spectroscopy of Irradiation Effect in Three Carbon Allotropes Induced by Low Energy B Ions

Irradiation efect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite (HOPG) induced by 170 keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The diferences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation,diamond is the second one and the structure of HOPG is the most stable under B ion irradiation. The damage cross sections ? of C60, diamond and HOPG deduced from the Raman spectra are 7.78×10−15 , 6.38×10−15 and1.31 × 10−15cm2, respectively.