Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR
| Data(s) |
1994
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|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:14:42导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:14:42Z (GMT). No. of bitstreams: 1 6085.pdf: 1420674 bytes, checksum: f4a699ad988d834237dee921f2b23d5a (MD5) Previous issue date: 1994 中科院半导体所 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Ma Zhenyu;Wang Qiyuan;Zan Yude;Cai Tianhai;Yu Yuanhuan;Lin Lanying.Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR,半导体学报,1994,15(3):217 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
