Design and operation of integrated pilot-scale dimethyl ether synthesis system via pyrolysis/gasification of corncob

The integrated pilot-scale dimethyl ether (DME) synthesis system from corncob was demonstrated for modernizing utilization of biomass residues. The raw bio-syngas was obtained by the pyrolyzer/gasifier at the yield rate of 40-45 Nm(3)/h. The content of tar in the raw bio-syngas was decreased to less than 20 mg/Nm(3) by high temperature gasification of the pyrolysates under O-2-rich air. More than 70% CO2 in the raw bio-syngas was removed by pressure-swing adsorption unit (PSA). The bio-syngas (H-2/CO approximate to 1) was catalytically converted to DME in the fixed-bed tubular reactor directly over Cu/Zn/Al/HZSM-5 catalysts. CO conversion and space-time yield of DME were in the range of 82.0-73.6% and 124.3-203.8 kg/m(cat)(3)/h, respectively, with a similar DME selectivity when gas hourly space velocity (GHSV, volumetric flow rate of syngas at STP divided by the volume of catalyst) increased from 650 h(-1) to 1500 h(-1) at 260 degrees C and 4.3 MPa. And the selectivity to methanol and C-2(+) products was less than 0.65% under typical synthesis condition. The thermal energy conversion efficiency was ca. 32.0% and about 16.4% carbon in dried corncob was essentially converted to DME with the production cost of ca. (sic) 3737/ton DME. Cu (111) was assumed to be the active phase for DME synthesis, confirmed by X-ray diffraction (XRD) characterization.

Design and Operation of A 5.5 MWe Biomass Integrated Gasification Combined Cycle Demonstration Plant

The design and operation of a 5.5 MWe biomass integrated gasification combined cycle (IGCC) demonstration plant, which is located in Xinghua, Jiangsu Province of China, are introduced. It is the largest complete biomass gasification power plant that uses rice husk and other agricultural wastes as fuel in Asia. It mainly consists of a 20 MWt atmospheric circulating fluidized-bed gasifier, a gas-purifying system, 10 sets of 450 kW(e) gas engines, a waste heat boiler, a 1.5 MWe steam turbine, a wastewater treatment system, etc. The demonstration plant has been operating since the end of 2005, and its overall efficiency reaches 26-28%. Its capital cost is less than 1200 USD/kW, and its running cost is about 0.079 USD/kWh based on the biomass price of 35.7 USD/ton. There is a 20% increment on capital cost and 35% decrease on the fuel consumption compared to that of a 1 MW system without a combined cycle. Because only part of the project has been performed, many of the tests still remain and, accordingly, must be reported at a later opportunity.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

A High Speed, 12-Channel Parallel, Monolithic Integrated CMOS OEIC Receiver

The design and fabrication of a high speed, 12-channel monolithic integrated CMOS optoelectronic integrated circuit(OEIC) receiver are reported.Each channel of the receiver consists of a photodetector,a transimpedance amplifier,and a post-amplifier.The double photodiode structure speeds up the receiver but hinders responsivity.The adoption of active inductors in the TIA circuit extends the-3dB bandwidth to a higher level.The receiver has been realized in a CSMC 0.6μm standard CMOS process.The measured results show that a single channel of the receiver is able to work at bit rates of 0.8～1.4Gb/s. Altogether, the 12-channel OEIC receiver chip can be operated at 15Gb/s.

A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings

A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface. Diode-connected nMOS transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. A novel analysis is given to determine the noise power spectral density. Simulation results show that the two-stage CMOS preamplifier in a closed-loop capacitive feedback configuration provides an AC in-band gain of 38.8dB,a DC gain of 0,and an input-referred noise of 277nVmax, integrated from 0. 1Hz to 1kHz. The preamplifier can eliminate the DC offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.

A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Butt-Joint Monolithicaily Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design, fabrication, and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application. This paper mainly aims at two aspects. One is to improve the optical coupling between the laser and modulator; another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator. The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA. Output power at 100mA is more than 10mW. The extinction characteristics,modulation bandwidth, and electrical return loss are measured. 3dB bandwidth more than 10GHz is monitored.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dualwaveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB. These devices exhibit a 3dB modulation bandwidth of 15. 0GHz, and modulator DC extinction ratios of 16.2dB. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7. 3°× 18. 0°,respectively, resulting in a 3. 0dB coupling loss with a cleaved single-mode optical fiber.