Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

中浓度P���掺杂透射式砷化镓光阴极材料及其制备方法

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高光电转换效率的P-N结硅光电二极管

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磁性p-n结薄膜材料及制备方法

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高P���载流子浓度的氮化镓基化合物薄膜的生长方法

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应变调制掺杂法制备P���氧化锌半导体薄膜材料的方法

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n+/p���GaAs太阳电池表面高透射率窗口层的制备方法

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具有布拉格反射器的n+/p���高抗辐照GaAs太阳电池

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Mg-Sb共掺杂p���ZnO薄膜的制备方法

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P���氮化镓电极的制备方法

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δ掺杂制备P���氧化锌薄膜的方法

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GaN基功率型LED的P���N双透明接触电极及制备方法

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可调谐光纤F-P���滤波器

于AD批量导入至AEzhangdi

利用p���掺杂的硅衬底生长高结晶质量氧化锌纳米棒的方法

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Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y = Mg, Be)

Using the density function theory within the generalized gradient approximation, the band structures of wurtzite ZnO, BeO and MgO have been calculated. The effective-mass parameters are fitted using the calculated eigenvalues. The Dresselhaus spin-orbit effect appears in the k[1 00] direction, and is zero in the high symmetry direction k[00 1]. The orderings of valence band split by the crystal-field and spin-orbit coupling in wurtzite ZnO, BeO and MgO are identified by analyzing the wave function characters calculated by projecting the wave functions onto p-state in the spherical harmonics. For wurtzite ZnO, the ordering of valence band is Still Gamma(7) > Gamma(9) > Gamma(7) due to the negative spin-orbit coupling splitting energy and the positive crystal-field splitting energy. Thus, the Thomas' conclusion is confirmed. For wurtzite BeO and MgO, although their orderings of valence bands are Gamma(7) > Gamma(9) > Gamma(7) too, the origins of their orderings are different from that of wurtzite ZnO. Zn1-x,YxO (Y = Mg, Be) doped with N and P atoms have been studied using first-principles method. The calculated results show that N atom doped in Zn1-x BexO has more shallow acceptor energy level with increasing the concentration of Be atom. (C) 2008 Elsevier B.V. All rights reserved.