Langmuir-Blodgett 薄膜诱导晶体生长研究

近年来，Langmuir—Blodgett（LB）薄膜诱导晶体生长的方法引起了人们的极大关注。通过优化LB膜的结构和化学性质可以调控晶体的结构、形貌、取向、晶型。本论文在此领域的主要研究内容如下： (1) 制备了硬脂酸和十八胺两种具有不同结构和官能团的LB膜，然后把这两种膜垂直浸入到中性的甘氨酸溶液中。实验结果表明用不同结构和化学性质的LB膜不仅可以调控晶体的结构、形貌和取向，并且可以在相同的溶液中诱导出不同晶型的晶体。 (2) 制备了Y型硬脂酸LB膜，然后把这种模板以不同的方式浸入到氯化钾溶液中。通过改变LB膜模板在溶液中的放置方式，控制溶液中的诱导成核和自发成核的过程，从而生成不同形貌的氯化钾晶体。 (3)我们研究了不同热力学状态的LB膜诱导五水硫酸铜晶体生长过程。结果表明LB膜即使在液态状态下，仍有诱导晶体生长的能力。且LB膜的热力学状态对晶体的形貌和取向有很大的影响。 另外，我们在以上工作之外，还作了两项其他工作。 (4) 研究了各种羧酸类（甲酸、乙酸、丙酸）、丙酮、醇类（甲醇、乙醇、丙醇、丁醇）对谷氨酸溶液结晶晶型的影响。结果表明：当70°C的谷氨酸饱和溶液快速冷却搅拌到0°C时，有羧酸类物质存在时可以得到β型晶体;而当有酮类、醇类、或无添加剂时在相同条件下得到α型晶体。 (5) 利用LB技术制备了聚苯乙烯和硬脂酸的混合薄膜。实验结果证明PS和SA在混合LB膜中是相分离的。其过程是PS在空气/水界面上首先发生聚集,然后这种聚集的程度随着膜压的增加而增大.并且PS在空气-LB膜界面上在空气/LB膜界面上的聚集程度随着时间仍继续发生改变。

十八胺及其相关物质Langmuir-Blodgett膜的制备和性质研究

Langmuir-Blodgett（LB）膜技术由于在电子学、非线性光学以及化学传感器等领域具有潜在的应用前景而引起了人们的研究兴趣，其中它的热稳定性对LB膜的应用领域和范围具有一定的影响。本论文在此领域的主要研究内容如下： 利用LB膜技术分别制备了十八胺及硬脂酸、氘代硬脂酸的多层LB膜，采用变温傅立叶变换红外光谱研究了三种LB膜的相变行为。实验发现：十八胺LB膜在55-75 oC温度区间内发生相变，其CH2对称和反对称伸缩振动频率向高能量区发生明显移动；硬脂酸LB膜在70-80 oC的温度区间内发生了明显的相转变，CH2对称和反对称伸缩振动的强度比在升温过程中也有显著改变；氘代硬脂酸LB膜的相行为发生在65-70 oC的温度区间内。 利用LB膜技术制备了十八铵硬脂酸盐(C18H37NH3+C17H35COO-, ODASA)与十八铵氘代硬脂酸盐(C18H37NH3+C17D35COO-, ODASA-d35) Langmuir-Blodgett (LB)膜，使用变温傅立叶变换红外透射光谱研究了它们的热行为。发现LB膜中十八铵硬脂酸盐分子的两个碳氢链高度有序，然而在十八铵氘代硬脂酸盐LB分子中的来自于十八胺的碳氢链部分无序，即在常温下有一些扭曲构象存在于碳氢链中。而十八铵硬脂酸盐的热稳定性也与十八铵氘代硬脂酸盐的热稳定性有些不同。在十八铵硬脂酸盐LB膜中，碳氢链在85 oC到90 oC的温度区间内发生非常明显的有序-无序变化。而在十八铵氘代硬脂酸盐LB膜中，碳氢链和来自于硬脂酸的氘代的烃链各自呈现出不同的热行为，即：碳氢链在80-90 oC的温度区间发生有序-无序变化，尤其是在80-85 oC的温度范围内这个变化非常显著；而氘代的烃链则在70 oC到85 oC这个较长的温度区间发生缓慢的相变。 分别制备了十八铵十二酸盐 （C18H37NH3+C11H23COO-，ODALA）和十八铵二十四酸盐（C18H37NH3+C23H45COO-,ODATA）LB膜，并用变温傅立叶变换红外透射光谱法研究了十八铵十二酸盐和十八铵二十四酸盐LB膜的热行为，比较了十八铵十二酸盐、十八铵硬脂酸盐和十八铵二十四酸盐这三种双链化合物LB膜的热行为。温度相关的红外光谱显示，这三种物质LB膜的热稳定性取决于碳链的长度。其中，十八铵十二酸盐LB膜在50-65 oC的温度区间内发生相变。对应的，十八铵二十四酸盐LB膜在80-90 oC的温度范围内发生有序-无序变化。令人感兴趣的是，十八铵二十四酸盐LB膜的相变温度与十八铵硬脂酸盐LB膜的相变温度基本一样，都是80-90 oC，也即在十八铵二十四酸盐和十八铵硬脂酸盐两种LB膜中，即使二十四酸取代了硬脂酸对前者的热稳定性的影响非常小。以上结果说明，在双长链化合物中，有效链长度取决于双链中的较短的那个烃链，从而来决定膜的热稳定性。在十八铵二十四酸盐LB膜中，十八胺的全部碳链对膜的热稳定性有贡献，而二十四酸的碳链则只有部分（有效部分）烃链有贡献。 制备了十八胺单层和多层LB膜和粒径为几个纳米的金纳米粒子。由于十八胺在pH值小于10.3的溶液中氨基带正电荷，使其置于金纳米溶胶中，利用带正电荷的十八胺和附着负电荷的金纳米粒子之间的静电作用，使得金纳米颗粒成功地吸附组装到十八胺的有序分子膜中，形成有规律的纳米颗粒层。通过紫外-可见光谱、红外光谱以及扫描电镜观察到，金纳米颗粒通过这种方法能够很好的组装在有机分子膜上，而且由于十八胺LB膜的高度有序性使得金纳米颗粒的组装层有序。而且，不同层数的十八胺LB膜对金纳米粒子呈现出不同的吸附行为。 测量了含微量甲醇（体积分数为0.04%~0.24%）的系列乙醇水溶液的近红外光谱，利用近红外光谱分析建立了预测甲醇含量的定量分析模型。比较了用外部检验法（Test Set-Validation）和交叉检验法(Cross-Validaton)建立的数学模型以及研究了使用外部检验法时校正集和检验集样品数的改变对模型预测结果的影响。结果发现，当校正集样品数为15检验集样品数为6（总样品数为21）时，使用外部检验法建立的数学模型预测结果较好，外部检验与交叉检验的预测均方根误差（分别为RMSEE和RMSEP）都较小（分别为0.0105和0.0115）而且很接近。结果表明，近红外光谱方法简单，准确而且实用。

A switch-on mechanism to activate maize ribosome-inactivating protein for targeting HIV-infected cells

Maize ribosome-inactivating protein (RIP) is a plant toxin that inactivates eukaryotic ribosomes by depurinating a specific adenine residue at the a-sarcin/ricin loop of 28S rRNA. Maize RIP is first produced as a proenzyme with a 25-amino acid internal inactivation region on the protein surface. During germination, proteolytic removal of this internal inactivation region generates the active heterodimeric maize RIP with full N-glycosidase activity. This naturally occurring switch-on mechanism provides an opportunity for targeting the cytotoxin to pathogen-infected cells. Here, we report the addition of HIV-1 protease recognition sequences to the internal inactivation region and the activation of the maize RIP variants by HIV-1 protease in vitro and in HIV-infected cells. Among the variants generated, two were cleaved efficiently by HIV-1 protease. The HIV-1 protease-activated variants showed enhanced N-glycosidase activity in vivo as compared to their un-activated counterparts. They also possessed potent inhibitory effect on p24 antigen production in human T cells infected by two HIV-1 strains. This switch-on strategy for activating the enzymatic activity of maize RIP in target cells provides a platform for combating pathogens with a specific protease.

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

Mechanism of Wafer Bonding Process

国家自然科学基金

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Formation mechanism of defects in annealed InP

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.