Formation mechanism of electric field domains
Data(s) |
1998
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Resumo |
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved. Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:35导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:35Z (GMT). No. of bitstreams: 1 3053.pdf: 294436 bytes, checksum: 9290a14c04f883af897e2f9a6c511e3b (MD5) Previous issue date: 1998 Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 10083, Peoples R China; Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Sun BQ; Liu ZX; Jiang DS .Formation mechanism of electric field domains .见:ELSEVIER SCIENCE BV .MICROELECTRONIC ENGINEERING, 43-4,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1998,733-737 |
Palavras-Chave | #半导体物理 #electric field domains #Gamma-Gamma resonant tunnelling #Gamma-X resonant tunnelling |
Tipo |
会议论文 |