Formation mechanism of defects in annealed InP
| Data(s) |
1998
|
|---|---|
| Resumo |
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed. Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:20Z (GMT). No. of bitstreams: 1 3040.pdf: 392263 bytes, checksum: dd4d290baa0de6fc549dd1b325a200ec (MD5) Previous issue date: 1998 SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Han YJ; Liu XL; Jiao JH; Lin LY .Formation mechanism of defects in annealed InP .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC MATERIALS AND DEVICES, 3419,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,346-353 |
| Palavras-Chave | #光电子学 #defects formation #hydrogen related defects #semi-insulating #InP |
| Tipo |
会议论文 |
