Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions

We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction fight-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at E-1 = E-C - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

III-V族化合物半导体超晶格的喇曼散射研究

于G批量导入至Hzhangdi

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

离子液体在铈（IV）钍及稀土（III）萃取分离中的应用研究

本文对1-辛基-3-甲基咪唑六氟磷酸盐离子液体（[C8mim]PF6）在包头稀土矿分离钍以及攀西矿分离铈工艺中的应用作了初步探索。论文首先研究了伯胺N1923溶于离子液体对硫酸体系钍的萃取分离行为，考察了酸度、盐析剂浓度、萃取剂浓度等对N1923/IL萃取钍的影响，并与庚烷体系的萃取规律作了对比。在此基础上对萃取机理进行了探讨，提出了不同于分子溶剂体系的萃取机理，认为N1923/IL在水相有硫酸钠作为盐析剂时对钍的萃取为“胶束增溶”萃取机理。此外，钍对稀土的分离考察结果认为，虽然N1923/IL对钍的萃取效率降低，但在一定条件下钍对稀土仍能保持较高的分离系数。由此本文对N1923/IL应用于钍的分离实践作了初步评估。 论文的另外一部分工作研究了纯[C8mim]PF6及其与2-乙基己基膦酸二（2-乙基己基）酯（DEHEHP）的混合体系对硝酸铈（IV）的萃取性能。研究发现纯[C8mim]PF6本身对硝酸铈（IV）有良好的萃取选择性，机理考察结果认为铈（IV）的萃取是由于Ce4+离子在富硝酸根溶液中形成络阴离子Ce(NO3)62-并与离子液体的阴离子PF6—发生交换的结果。一种新型含铈离子液体[C8mim]2Ce(NO3)6的合成进一步证实了这一机理。反萃考察发现被萃入离子液相的铈（IV）用水可完全反萃，且萃取和反萃过程中因离子交换机理导致的离子液体流失可以通过添加适量离子液体组分的方法予以抑制。此外，本文考察了DEHEHP溶于[C8mim]PF6对于含氟硝酸体系铈（IV）的萃取行为，发现在一定条件下DEHEHP对铈（IV）的萃取能获得与分子溶剂中等同的萃取机理。在此基础上，采用DEHEHP/IL从氟碳铈矿分解液中进行分离铈和氟的研究，获得纯度为99.9%以上的纳米CeF3产品。由此我们提出一个将离子液体应用于攀西氟碳铈矿铈钍稀土分离流程的模型，为离子液体在稀土清洁分离流程中实现溶剂绿色化的目标提供了一个范例。

膜基萃取稀土研究－中空纤维膜器中RE(III)、Th(IV)的萃取传质动力学及分离

首次使用两种新的聚偏氟乙烯中空纤维膜萃取法研究了HEH／EHP体系中钕、钐及铈及Cyanex272体系中镱、铒及钍的膜基萃取及分离。研究了膜材料性能。提出了膜萃取反应与液液萃取相同，且均为一级反应；高料液pH值条件下的H~+优先于NH_4~+的传质规律；氨化萃取剂可降低传质阻力；膜萃取机理为伴有界面反应的扩散控制机理及膜孔径对萃取机理的影响。利用钍的传质速率远大于镱的传质速率的特点，实现动力学竞争分离钍和镱。通过界面反应动力学研究，得到了各组分的反应动力学方程、反应速率常数K及相关组分的分离系数。将氨离子选择电极与流动注射分析相结合，实现了氨离子的自动在线分析。为膜萃取技术的工业化提供有价值的基本参数。