Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions
Data(s) |
1999
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Resumo |
We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction fight-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at E-1 = E-C - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Ho WY; Fong WK; Surya C; Tong KY; Lu LW; Ge WK .Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions ,MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH ,1999,4(0):Art.No.G6.4 |
Palavras-Chave | #半导体材料 #FLUCTUATIONS #QUALITY #DIODES |
Tipo |
期刊论文 |