Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film

Negative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film. (c) 2006 Elsevier B.V. All rights reserved.

Optical, structural and laser-induced damage threshold properties of HfO2 thin films prepared by electron beam evaporation

We prepare HfO2 thin films by electron beam evaporation technology. The samples are annealed in air after deposition. With increasing annealing temperature, it is found that the absorption of the samples decreases firstly and then increases. Also, the laser-induced damage threshold (LIDT) increases firstly and then decreases. When annealing temperature is 473K, the sample has the highest LIDT of 2.17J/cm(2), and the lowest absorption of 18 ppm. By investigating the optical and structural characteristics and their relations to LIDT, it is shown that the principal factor dominating the LIDT is absorption.

Optimization of near-field optical field of multi-layer dielectric gratings for pulse compressor

Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO2 and SiO2, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge. (c) 2006 Elsevier B.V. All rights reserved.

沉积温度对电子束蒸发HfO2薄膜残余应力的影响

采用电子束蒸发沉积方法在BK7玻璃基底和熔融石英基底上沉积了HfO2薄膜，研究了不同沉积温度下的应力变化规律。利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化，计算了薄膜应力。结果发现在所考察的实验条件下HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小。两种基底上薄膜的残余应力的主要产生机制不同。对于BK7玻璃基底HfO2薄膜的残余应力起决定作用的是内应力，熔融石英基底上HfO2薄膜的残余应力在较低沉积温度下制备的薄膜起决定作用的是热应力，在沉积温度进一步升高后内应力开始起决定作用。

多层介质膜脉冲压缩光栅近场光学特性分析

利用傅里叶模式理论分析了TE波自准直角入射的使用条件下，多层介质膜光栅的光栅区和多层膜区电场分布的特点．分别讨论了HfO2和SiO2为顶层光栅材料时，光栅结构参数对光栅脊峰值电场的影响，结果表明，对于不同膜厚的顶层材料，存在一个最佳膜厚度，使光栅脊峰值电场最小，并且当膜厚增大时，设计大高宽比的光栅可以降低该电场峰值．最后，在大角度条件下使用多层膜光栅也可以降低光栅脊处的峰值电场．

Defect-induced failure of optical coating filters

Optical filters composed of Ag, Al2O3, and ZnSe films were prepared on BK7 substrates by evaporation. By employing spectrophotometer, microscope, scanning electron microscope (SEM), and energy dispersive spectrum (EDS) analysis, the moisture-dependent stability of the samples was tested. The experimental results revealed that filter failure often occurs initially at defect sites. Small sputtering particles and pinhole are found to be two types of defects that induced the optical coating filter failure. The mechanisms of the defect-induced failure of the filters also are discussed in the article. (C) 2005 Elsevier Ltd. All rights reserved.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

HfO2薄膜的结构对抗激光损伤阈值的影响

利用蒸发氧化铪和离子辅助蒸发金属铪反应沉积氧化铪薄膜，对两种工艺下制备的氧化铪薄膜进行光学和结构以及激光损伤特性的研究，实验结果表明，用金属铪反应沉积的氧化铪薄膜不仅结构均匀，并且具有较高的激光损伤阈值．文章对损伤阈值和薄膜的结构及光学特性之间的关系进行了讨论。

沉积温度对HfO2薄膜残余应力的影响

用电子柬蒸发方法制备了HfO2薄膜，根据镀膜前后基片曲率半径的变化，用Stoney公式计算了薄膜应力。讨论了沉积温度对薄膜残余应力的影响。结果发现，HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小，在280℃左右出现极大值。对样品进行了XRD测试，从微观结构上对实验结果进行了分析，发现微结构演变引起的内应力变化是引起薄膜残余应力改变的主要因素，HfO2薄膜在所选沉积温度60～350℃内出现了晶态转变，堆积密度随温度升高而增大。

用于掺钛蓝宝石激光系统的高反膜的激光损伤

用电子束蒸发制备了用于掺钛蓝宝石啁啾脉冲放大激光系统的TiO2/HfO2/SiO2高反膜，其带宽约为176nm（R>98%, λ0=800nm），激光损伤阈值（LIDT）为2.4 J/cm2。通过TiO2和HfO2单层膜的透过光谱计算了这两种材料的折射率和消光系数。高反膜的性能主要由高折射率材料决定：折射率越高，反射带越宽；消光系数越小，薄膜吸收越小，LIDT越高。最后，讨论了高反膜的激光损伤机制。

Influences of annealing on residual stress and structure of HfO2 films

HfO2 Elms are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100 degrees C and 400 degrees C on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜，并分别用两种后处理方法（空气中退火和氧等离子体轰击）对样品进行了处理．然后，对样品的透过率、吸收和抗激光损伤阈值进行了测试分析．实验结果表明，两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值．实验结果还表明，氧等离子体轰击的后处理效果明显优于热退火，样品的吸收平均值在氧等离子体后处理前后分别为34．8ppm和9．0ppm，而基频（1 064nm）激光损伤阈值分别为10．0J／cm^2和21．4J／cm^2．

薄膜厚度对HfO2薄膜残余应力的影响

HfO2薄膜是用电子束蒸发方法制备的，利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化，计算了薄膜应力。对样品进行了XRD测试，讨论了膜厚对薄膜残余应力的影响。结果发现不同厚度HfO2薄膜的残余应力均为张应力，应力值随薄膜厚度的增加而减小，当薄膜厚度达到一定值后，应力值趋于稳定。从微观结构变化对实验结果进行了分析，发现微结构演变引起的本征应力变化是引起薄膜残余应力改变的主要因素。

1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较

研究了电子束蒸发制备的HfO2／SiO2高反膜在1064nm与532nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑。当能量密度较大时出现分层剥落；二倍频激光损伤主要是由电子缺陷引起的平底坑，辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑，但电子缺陷的损伤阈值更低；随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为，辐照激光波长的变化。引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。