沉积温度对HfO2薄膜残余应力的影响

用电子柬蒸发方法制备了HfO2薄膜，根据镀膜前后基片曲率半径的变化，用Stoney公式计算了薄膜应力。讨论了沉积温度对薄膜残余应力的影响。结果发现，HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小，在280℃左右出现极大值。对样品进行了XRD测试，从微观结构上对实验结果进行了分析，发现微结构演变引起的内应力变化是引起薄膜残余应力改变的主要因素，HfO2薄膜在所选沉积温度60～350℃内出现了晶态转变，堆积密度随温度升高而增大。

HfO₁ films were prepared by electron beam evaporation.The residual stress was measured by ZYGO interferometer.The results showed that the residual stresses of HfO₂ films were tensile and increased with the increase of deposition temperature firstly,then decreased.The microstructure of the HfO₂ films was inspected with X-ray diffraction(XRD).The microstructure of the films transmitted from amorphous to polycrystalline,which corresponded to the variation of the residual stress.The microstructure of HfO₂ film changed as the deposition temperature increased and the residual stress evolved as the changing of the microstructure.