交叉电场和磁场下GaAs/AlGaAs超晶格子带结构

于2010-11-23批量导入

GaAs/AlGaAs多量子阱结构的光吸收谱和横向光电流谱

国家自然科学基金

GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析

于2010-11-23批量导入

CCTS结构GaAs/AlGaAs单量子阱双稳态激光器

于2010-11-23批量导入

GaAs/AlGaAs量子阱的输运特性

于2010-11-23批量导入

空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器

国家自然科学基金

GaAs/AlGaAs多量子阱激光器

于2010-11-23批量导入

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

THERMAL POPULATION IN ASYMMETRIC DOUBLE WELLS COUPLED BY HOLE MIXING TUNNELING

The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an analysis of the high energy tails in cw photoluminescence spectra of asymmetric coupled double wells. Photocarriers in wide well are heated due to hole transfer from the narrow well through resonant tunneling as well as by photon heating. The influences of the excitation intensity and lattice temperature on the tunneling transfer and thermal population are discussed.

调制掺杂AlGaAs/GaAs异质结构中衬底光激发对导电沟道的作用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Strong in-plane optical anisotropy of asymmetric (001) quantum wells

It is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (IPOA) in (001) quantum wells (QWs). In this letter, asymmetry is introduced in (001) GaAs/AlGaAs QWs by inserting 1 ML (monolayer) of InAs or AlAs at interfaces. Strong IPOA, which is comparable to that in the InGaAs/InP QWs with no common atom, is observed in the asymmetric GaAs/AlGaAs QW by reflectance difference spectroscopy. (C) 2006 American Institute of Physics.