低甲醇透过直接甲醇燃料电池(Low Methanol Crossover Direct Methanol Fuel Cell)

直接甲醇燃料电池与间接甲醇燃料电池相比，体积更小，重量更轻，因此在一些领域有诱人的应用前景。但是，在它们实际应用之前，必须解决一些具体的技术难题。目前，甲醇从阳极透过到阴极是影响电池性能的主要难题之一，另外，催化剂和电极的制备方法也对电池的性能有重要的影响。本论文的主要目的在于研制低甲醇透过直接甲醇燃料电池并有效地提高电池的性能。为了减小甲醇在Nafion117膜中的透过，提出并研制了铭纳米粒子修饰的Nafion复合膜，该方法包括与[Pd(NH_4)_4]~(2+)离子的离子交换过程和化学还原过程。研究了一种制备高分散性铂基催化剂的方法。另外我们还研究并分析了不同的电池运行参数，例如温度、甲醇浓度等，刘一电池性能和甲醇透过的影响。主要结果如下：1.采用离子交换还原法在Nafionll7膜内部沉积纳米把粒子，制备成高聚物电解质复合膜。研究了镀把前后Nafion膜表面形态、甲醇透过和膜的电导的变化和对直接甲醇燃料电池的性能的影响等。由于把纳米粒子阻碍了甲醇透过，同时，由于它对氢离子的强吸引力，不但不对氢离子的透过产生影响，而且还提高了膜佩狗电导。所以镀把后电解质膜的甲醇透过减少，膜电导增加，无论在低电流密度区还是在高电流密度区，电池性能都有效地提高。2.研究了一种制备高分散性铂基催化剂的新方法一预沉淀还原法。并采用TEM,XRD和电化学等技术来表征催化剂中铂的粒径、晶态结构和催化活性：与传统的化学还原法相比，因为该方法在化学还原过程中反应物与载体的作用力得到增强，所以采用该方法制备的催化剂铂分散性更好、晶态结构更低、粒径更小并且催化活性更好。该方法在直接甲醇燃料一电池中有应用价值。3.研究并分析了不同的电池运行参数，例如温度、甲醇浓度等，对电池性能和甲醇透过的影响。研究发现当电池运行温度增加时，电池性能提高，甲醇透过增加；甲醇浓度增加时，甲醇透过增加，但是，甲醇浓度对电池性能有不同的影响，在低甲醇浓度区，甲醇浓度增加，电池性能提高；在高甲醇浓度区，甲醇浓度增加，电池性能降低；存在一个最佳甲醇浓度，在该甲醇浓度的条件下，电池的性能最高。实验结果为：采用Nafion117膜时，电池的最佳甲醇浓度为2. 0 mol/L，采用镀把Nafion117膜时，电池的最佳甲醇浓度高于4.0 mol/Lo

Microarray Analyses of Gene Expression during the Tetrahymena thermophila Life Cycle

Background: The model eukaryote, Tetrahymena thermophila, is the first ciliated protozoan whose genome has been sequenced, enabling genome-wide analysis of gene expression. Methodology/Principal Findings: A genome-wide microarray platform containing the predicted coding sequences (putative genes) for T. thermophila is described, validated and used to study gene expression during the three major stages of the organism's life cycle: growth, starvation and conjugation. Conclusions/Significance: Of the,27,000 predicted open reading frames, transcripts homologous to only,5900 are not detectable in any of these life cycle stages, indicating that this single-celled organism does indeed contain a large number of functional genes. Transcripts from over 5000 predicted genes are expressed at levels >5x corrected background and 95 genes are expressed at >250x corrected background in all stages. Transcripts homologous to 91 predicted genes are specifically expressed and 155 more are highly up-regulated in growing cells, while 90 are specifically expressed and 616 are up-regulated during starvation. Strikingly, transcripts homologous to 1068 predicted genes are specifically expressed and 1753 are significantly up-regulated during conjugation. The patterns of gene expression during conjugation correlate well with the developmental stages of meiosis, nuclear differentiation and DNA elimination. The relationship between gene expression and chromosome fragmentation is analyzed. Genes encoding proteins known to interact or to function in complexes show similar expression patterns, indicating that co-ordinate expression with putative genes of known function can identify genes with related functions. New candidate genes associated with the RNAi-like process of DNA elimination and with meiosis are identified and the late stages of conjugation are shown to be characterized by specific expression of an unexpectedly large and diverse number of genes not involved in nuclear functions.

EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION

Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed.

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

In AlGaAs/InGaAs/GaAs PM-HEMT structures, the characterization of deep centers, the degradation in electrical and optical properties and their effects on electrical performance of the PM-HEMTs have been investigated by DLTS, SIMS, PL and conventional van der Pauw techniques. The experimental results confirm that the deep level centers correlate strongly with the oxygen content in the AlGaAs layer, the PL response of PM-HEMTs, and the electrical performance of the PM-HEMTs. Hydrogen plasma treatment was used to passivate/annihilate these centers, and the effects of hydrogenation were examined.

Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD

The deep centers in AlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique, The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (Hi and E3), having large capture cross sections and concentrations, are observed in the graded n-AlxGa1-xAs layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the n-AlxGa1-xAs layer with x = 0.20-0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in the n-AlxGa1-xAs layer with x = 0.18-0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the AlxGa1-xAs layer with x = 0.22-0.30.

LUMINESCENCE-CENTERS IN POROUS SILICON

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100-150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of Gamma and X band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.