ADMITTANCE ANALYSIS OF DX CENTERS IN TE-DOPED LPE N-TYPE AIGAAS MATERIAL

Autoria(s): GE WK; WU RG
Data(s)

1987
Identificador

http://ir.semi.ac.cn/handle/172111/14657

http://www.irgrid.ac.cn/handle/1471x/101363
Idioma(s)

英语
Fonte

GE WK; WU RG.ADMITTANCE ANALYSIS OF DX CENTERS IN TE-DOPED LPE N-TYPE AIGAAS MATERIAL,CHINESE PHYSICS ,1987,7(1):229-239
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital