基于ARM920T的HIRFL-CSR前端总线控制器FBC-01

本文论述用于兰州重离子加速器冷却存储环(HIRFL-CSR)控制系统的前端总线系统控制器FBC-01的硬件设计。该控制器是基于0.8mmBGA封装的AT91RM9200(ARM9)处理器,运行嵌入式LINUX操作系统。控制器可以连接标准的VGA显示器、键盘、鼠标,具有通用的10M/100M以太网接口、USB接口、RS-232接口、485接口、CANBUS接口。可以带SD卡、CF���存储器。该控制器采用现场可编程的FPGA器件设计背板接口,并采用具有64mA高驱动能力的总线驱动器,不仅符合VME规范的电气要求,而且具有灵活的接口信号定义可编程能力,是HIRFL-CSR控制系统的关键部件。

高位置分辨平行板雪崩室的研制

描述了灵敏面积为 10 0 mm× 10 0 mm和 150 mm× 150 mm两维位置灵敏雪崩室。采用分块结构 ,电极从两端分前后点引出 ,增加了延迟线的长度 ,延迟线跨边连接和在大气中直接封真空技术。在流动的 4 2 0 Pa的正庚烷气体中 ,用2 52 Cf���变源对探测器的性能进行了测试 ,得到Δx=Δy=1mm的位置分辨。

Modification of Fe/Cu Multilayers under 2-MeV Xe20+ Irradiation

Multilayers with a structure of Si/[Fe(10 nm)/CU(10 nm)](5) were deposited on Si(100) substrates and then irradiated at room temperature by using 2-MeV Xe20+. The modifications of the multilayers were characterized using a depth profile analysis of the Auger electron spectroscopy (AES) data and the evolution of crystallite structures of the multilayers were analyzed by using X-ray diffraction (XRD). The AES depth profiles indicated that de-mixing of the Fe and the Cu layers was observed at low ion fluences, but inter-mixing of the Fe and the Cu layers was found at high ion fluences and destroyed the layered structure of the multilayers. The obtained XRD patterns showed that, after irradiation by 2-MeV Xe20+ at; 2 x 10(16) ions/cm(2), the peaks of the multilayers related to a Cu-based fee solid solution and an Fe-based bee solid solution phase became visible, which implied that the inter-mixing at the Fe/Cu interface resulted in the formation of new phases. A possible mechanism of modification in the Fe/Cu multilayers induced by ion irradiation is briefly discussed.

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Competition in rotation-alignment between high-j neutrons and protons in transfermium nuclei

The study of rotation-alignment of quasiparticles probes sensitively the properties of high-j intruder orbits. The distribution of very-high-j orbits, which are consequences of the fundamental spin-orbit interaction, links with the important question of single-particle levels in superheavy nuclei. With the deformed single-particle states generated by the standard Nilsson potential, we perform Projected Shell Model calculations for transfermium nuclei where detailed spectroscopy experiments are currently possible. Specifically, we study the systematical behavior of rotation-alignment and associated band-crossing phenomenon in Cf, Fm, and No isotopes. Neutrons and protons from the high-j orbits are found to compete strongly in rotation-alignment, which gives rise to testable effects. Observation of these effects will provide direct information on the single-particle states in the heaviest nuclear mass region.

高电荷态离子126Xeq+引起GaN表面形貌变化研究

用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时，样品表面形貌还与入射离子的剂量和入射角有关；在实验参数范围，与入射离子的初动能没有明显关系（180 keV≤Ek≤600 keV）.当入射离子的电荷态q=18，与样品表面法线成60°角倾斜入射和垂直表面入射时，样品的表面几乎没有变化，只是倾斜入射后有很微小的隆起；当q＜18时，样品表面膨胀隆起，粗糙度增强，倾斜入射时表面隆起比垂直入射时更明显，而且都有清晰的峰状分界区；当q＞18时，样品表面被蚀刻呈凹陷状，有明显的齿状刻痕，且侵蚀深度与离子剂量近似呈线性关系，倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.

beta-delayed proton decays and spin assignments for Sm-133 and Yb-149

The proton-rich isotope Sm-133 was produced via the fusion evaporation reaction Ca-40 + Ru-96. Its beta-delayed proton decay was studied by p-gamma coincidence in combination with a He-jet tape transport system, and half-lives, proton energy spectra, gamma-transitions following the proton emission, as well as beta-delayed proton branching ratios to the low-lying states in the grand-daughter nucleus were determined. Comparing the observed beta-delayed proton branching ratios with statistical model calculations, the best agreement is found assuming that only one level with the spin of 3/2 in Sm-133 decays or two levels with the spins of 1/2 and 5/2 decay with similar half-lives. The configuration-constrained nuclear potential energy surfaces of Sm-133 were calculated using the Woods-Saxon-Strutinsky method, which suggests a 1/2-ground state and a 5/2(+) isomer with an excitation energy of 120 keV. Therefore, the simple(EC+beta(+)) decay scheme of Sm-133 in Eur. Phys. J.A 11,277(2001) has been revised. In addition, our previous experimental data on the beta-delayed proton decay of Yb-149 reported in Eur. Phys. J. A 12,1 ( 2 0 0 1) was also analyzed using the same method. The spin-parity of Yb-149 is suggested to be 1/2(-).

Raman investigation of ion-implanted ZnO films

ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.

Identification of a quasiparticle band in very neutron-rich Zr-104

The high spin levels of a very neutron-rich Zr-104 nucleus have been reinvestigated by measuring the prompt. rays in the spontaneous fission of Cf-252. The ground-state band has been confirmed. A new sideband has been identified with a band-head energy at 1928.7 keV. The projected shell model is employed to investigate the band structure of Zr-104. The results of calculated levels are in good agreement with the experimental data, and suggest that the new band in Zr-104 may be based on the neutron nu 5/2(-)[532] circle times nu 3/2(+)[411] configuration.

Extracting single-particle information for the superheavy mass region by studying excited structure in transfermium nuclei

Recent experimental advances have made it possible to study spectroscopy in very heavy nuclei. We show that from the excited high-spin structure of transfermium isotopes, one may gain useful information on single-particle states for the superheavy mass region, which is the key to locating the anticipated 'island of stability'. In this work, we employ the Projected Shell Model for Cf, Fm, and No isotopes to study rotation alignment of the particles that occupy particular high-j intruder orbitals.