Silicon nanopore array structure using porous anodic alumina

A free-standing, bidirectionally permeable and ultra-thin (500-1000 nm) porous anodic alumina membrane was fabricated using a two-step aluminium anodization process, which was then placed on top of a silicon film as an etching mask. The pattern was transferred to silicon using dry-etching technology, and the silicon nanopore array structure was formed. The factors which afflct the pattern transfer process are discussed. Observation of the nanopatterned sample under a scanning electron microscope shows that the structure obtained by this method is made up of uniform and highly ordered holes, which attains to 125 nm depth. The photoluminescence spectrum from the nanopatterned sample,the surface of which has been thermal-oxidized, shows that the the luminesce is evidently enhanced, the mechanism of which is based on the normally weak TO phonon assisted bandgap light-emission process, and the physical reasons that underlic the enhancement have been analyzed. The PL results do show an attractive optical characteristic, which provides a promising pathway to achieve efficient light emission from silicon.

Elimination of environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating sensor array

We present a novel reference compensation method for eliminating environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating (FBG) sensors. By employing a shielded wavelength-division-multiplexed reference FBG in the system the environmental noise is mea, sured from the reference channel, and then subtracted from the demodulation result of each sensor channel. An approximate 40 dB reduction of the environmental noise has been experimentally achieved over a frequency range from 20 Hz to 2 kHz. This method is also suitable for the elimination of broadband environmental noise. The corresponding FBG sensor array system proposed in this paper has shown a wave-length resolution of 7 x 10(-4) pm/root Hz. (c) 2009 Elsevier B.V. All rights reserved.

1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2

BACKGROUND: Ultraviolet light emitting diodes (UV LEDs) were used as a light source in TiO2 photocatalysis because of their many advantages, such as, long life, safety, low pollution, etc. In this experiment, a light source panel was successfully fabricated with UV LEDs, the light intensities of which were relatively uniform.

Photoluminescence characterization of nanocrystalline ZnO array

High-density and uniform well-aligned ZnO sub-micron rods are synthesized on the silicon substrate over a large area. The morphology, and structure of the ZnO sub-micron rods are investigated by x-ray diffraction, transmission electron microscopy and Raman spectra. It is found that the ZnO sub-micron rods are of high crystal quality with the diameter in the range of 400-600 nm and the length of several micrometres long. The optical properties were studied bill photoluminescence spectra. The results show that the intensity of the ultraviolet emission at 3.3 eV is rather high, meanwhile the deep level transition centred at about 2.38 eV is weak. The free exciton emission could also be observed at low, temperature, which implies the high optical quality of the ZnO sub-micron rods. This growth technique provides one effective way to fabricate the high crystal quality ZnO nanowires array, which is very important for potential applications in the new-type optoelectronic nanodevices.

Determining of the delay time for a heating ventilating and air-conditioning plant using two weighted neural network approach

This paper presents an two weighted neural network approach to determine the delay time for a heating, ventilating and air-conditioning (HVAC) plan to respond to control actions. The two weighted neural network is a fully connected four-layer network. An acceleration technique was used to improve the General Delta Rule for the learning process. Experimental data for heating and cooling modes were used with both the two weighted neural network and a traditional mathematical method to determine the delay time. The results show that two weighted neural networks can be used effectively determining the delay time for AVAC systems.

High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array

State-filling effects of the exciton in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array are observed by quantum dot array photolumineseence at a sample temperature of 77 K. The exciton emission at low excitation density is dominated by the radiative recombination of the states in the s shell and at high excitation density the emission mainly results from the radiative recombination of the exciton state in the p shell. The spectral interval between the states in the s and p shells is about 30-40 mcV. The time resolved photoluminescence shows that the decay time of exciton states in the p shell is longer than that of exciton states in the s shell, and the emission intensity of the exciton state in the p shell is superlinearly dependent on excitation density. Furthermore, electron-hole liquid in the quantum dot array is observed at 77 K, which is a much higher temperature than that in bulk. The emission peak of the. recombination, of electron-hole liquid has an about 200 meV redshift from the exciton fluorescence. Two excitation density-dependent emission peaks at 1.56 and 1.59 eV are observed, respectively, which result from quantum confinement effects in QDs. The emission intensity of electron-hole liquid is directly proportional to the cubic of excitation densities and its decay time decreases significantly at the high excitation density.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes

A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

Determining of the delay time for a heating ventilating and air-conditioning plant using multi-weights neurons approach

This paper presents an multi weights neurons approach to determine the delay time for a Heating ventilating and air-conditioning (HVAC) plan to respond to control actions. The multi weights neurons is a fully connected four-layer network. An acceleration technique was used to improve the general delta rule for the learning process. Experimental data for heating and cooling modes were used with both the multi weights neurons and a traditional mathematical method to determine the delay time. The results show that multi weights neurons can be used effectively determining the delay time for HVAC systems.

Porous InP array-directed assembly of InAs nanostructure

Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes. Shallow pores direct the formation of closely spaced InAs dots at the bottom. Deep pores lead to progressive covering of the internal surface of pores by epitaxial material followed by pore mouth shrinking. For any depth an obvious dot depletion feature occurs on top of the pore framework. This growth method presages a pathway to engineer quantum-dot molecules and other nanoelements for fancy physical phenomena. (c) 2006 American Institute of Physics.

Fabrication of metallic air bridges using multiple-dose electron beam lithography

The techniques of fabricating metallic air bridges using different resists in a one-step electron beam lithography are presented. The exposure process employed a single-layer polymethyl methacrylate (PMMA) or photoresists with either different doses in the span and feet areas or with varying acceleration voltage of the electron beam. The process using photoresists with different doses has produced air bridges more stable than what the PMMA method using various acceleration voltages would achieve. Using this method, air bridges up to 12 mu m long have been fabricated. The length and height of these metallic air bridges vary with the photoresist thickness. (c) 2006 American Institute of Physics.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Structure, fluorescence and stability of CdS nanoparticles prepared in air

CdS nanoparticies were prepared in air and their stability by air annealing was studied. A small change in crystal structure and particle size was observed by air annealing, but a rapid reduction in fluorescence was found. Through investigation, it is revealed that it is the surface change or reconstruction rather than the variation of the size or structure that decreases the fluorescence. The emission of the particles consists with two peaks which are dependent on the excitation energy. The two peaks are considered to be arisen from "two" different sizes of nanoparticles and may be explained in terms of selectively excited photoluminescence. Finally we discuss why the discrete state of nanoparticles are able to be resolved in the photoluminescence excitation spectrum, but could not be differentiated in the absorption spectrum.

Subretinal implantable micro photodetector array

A subretinal implant device, Micro Photo Diode Array, which can partly imitate the function of photoreceptor cells, was presented. Process to fabricate the MPDA and characteristics of the MPDA in vivo were described.