Calculation of energy levels in InGaAs/GaAs quantum dot array


Autoria(s): Xiao-Jie, Y (Yang Xiao-Jie); Qing, W (Wang Qing); Wen-Quan, M (Ma Wen-Quan); Liang-Hui, C (Chen Liang-Hui)
Data(s)

2007

Resumo

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Identificador

http://ir.semi.ac.cn/handle/172111/9258

http://www.irgrid.ac.cn/handle/1471x/64041

Idioma(s)

中文

Fonte

Xiao-Jie, Y (Yang Xiao-Jie); Qing, W (Wang Qing); Wen-Quan, M (Ma Wen-Quan); Liang-Hui, C (Chen Liang-Hui) .Calculation of energy levels in InGaAs/GaAs quantum dot array ,ACTA PHYSICA SINICA,SEP 2007,56 (9):5429-5435

Palavras-Chave #光电子学 #InGaAs
Tipo

期刊论文