250 resultados para 311.7


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于2010-11-23批量导入

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于2010-11-23批量导入

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于2010-11-23批量导入

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于2010-11-23批量导入

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于2010-11-23批量导入

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用卢瑟福背散射沟道技术研究了1MeVSi~+在衬底加温和室温下以不同剂量注入Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs后的晶格损伤。在衬底加温下, 观察到Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围, 以及两种速率失去平衡的临界剂量。用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。

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863计划,国家攀登计划

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于2010-11-23批量导入

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国家自然科学基金

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The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

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<正>MCF-7细胞是被广泛用以研究乳腺癌的一株模式细胞,该细胞拥有野生型p53基因,但其辐射敏感性与p53基因表达状态无关,这提示可能存在其他基因参与调节其辐