A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

长波1.3 和1.5μm无致冷单模激光器研究

于G批量导入至Hzhangdi

1.5μm分布反馈激光器

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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing

The effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity.

Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers

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Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

1,5-二氮杂戊二烯合成非对称联吡啶研究

联吡陡及其衍生物不仅用于化工和药物合成的中间体，而且具有独特的赘合作用，可被用于金属催化剂配体等方面，因此它的合成方法研究引起了人们广泛的兴趣。但是非对称联吡陡的合成日前方法仍很少。本文利用己经被成功使用于其他含氮杂环的二碳合成子-1，5-二氮杂戊二烯（vinamidiniulnsalts），合成了单取代的2，2'-，2，3'-，2，4，一二类联吡陡。在合成1，5-二氮杂戊二烯的过程中：确立了一条以四甲氧基丙烷为原料一步合成l，5一二氮杂戊二烯的简捷，经济，易工业化的合成路线，并成功进行了公斤级的放大实验；优化了1，5-二氮杂戊二烯的亲电取代反应，高收率的获得溟代，硝化的1，5-二氮杂戊二烯；优化了从取代乙酸合成p取代1，5-二氮杂戊二烯的合成方法，高收率的获得九种p芳基取代1，5-二氮杂戊二烯。本文研究了非对称联吡睫合成的一种新方法：在碱性条件下，取代的1，5-二氮杂戊二烯盐各种乙酞基吡陡亲核加成的产物，不经分离直接和氨进行［3＋2＋1〕的成环反应，可以高收率的合成出单取代的2，2气，2，3气，2，4气三类联吡陡。这一方法己经被成功的应用于芳基取代，卤素取代，硝基取代以及无取代基的1，5-二氮杂戊二烯与三种乙酞基吡陡的反应。这种成环反应的收率与1，5-二氮杂戊二烯俘位的吸电子特征相关。因此，针对不同取代基的1，5-二氮杂戊二烯在溶剂，碱的选择以及反应温度的控制等方面进行了优化。从而成功合成出近30种单取代的非对称联吡陡。一这种合成方法，原料价格低廉，实验操作简单，而且收率高，非常适合大量合成的要求。

Long period grating for 3-5 mu m quantum-well infra-red photodetectors

By considering all possible high order diffracted waves, the authors calculate the coupling efficiency of long period gratings for 3-5 mu m quantum-well infra-red photodetectors (QWIPs) on the basis of the modal expansion model (MEM). A large coupling efficiency for 3-5 mu m QWIPs has been demonstrated. This greatly reduces the difficulties in fabricating 3-5 mu m grating coupled QWIPs and opens the way to fabricate high performance 3-5 mu m and two colour QWIPs image arrays.

1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE

High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.