High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

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Made available in DSpace on 2010-04-13T16:03:53Z (GMT). No. of bitstreams: 1 High Characteristic Temperature 1.3 mu m InAsGaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy.pdf: 638623 bytes, checksum: 4d6dd5ad199240fa92469e99dc5873a7 (MD5) Previous issue date: 2010

National High-Technology Research and Development Program of China 2006AA03Z401

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National High-Technology Research and Development Program of China 2006AA03Z401