The influence and chronological uncertainties of the 8.2 ka cooling event on continental climate records in China

IEECAS SKLLQG

Experimental study on heavy ion single event effects in SOI SRAMs

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

BRCA1 and its phosphorylation involved in caffeine-inhibitable event upstream of G2 checkpoint

Caffeine, which specifically inhibits ATM/ATR kinases, efficiently abrogates the ionizing radiation (IR)-induced G2 arrest and increases the sensitivity of various tumor cells to IR. Mechanisms for the effect of caffeine remain to be elucidated. As a target of ATM/ATR kinases, BRCA1 becomes activated and phosphorylated in response to IR. Thus, in this work, we investigated the possible role of BRCA1 in the effect of caffeine on G2 checkpoint and observed how BRCA1 phosphorylation was regulated in this process. For these purposes, the BRCA1 protein level and the phosphorylation states were analyzed by Western blotting by using an antibody against BRCA1 and phospho-specific antibodies against Ser-1423 and Ser-1524 residues in cells exposed to a combination of IR and caffeine. The results showed that caffeine down-regulated IR-induced BRCA1 expression and specifically abolished BRCA1 phosphorylation of Ser-1524, which was followed by an override of G2 arrest by caffeine. In addition, the ability of BRCA1 to transactivate p21 may be required for MCF-7 but not necessary for Hela response to caffeine. These data suggest that BRCA1 may be a potential target of caffeine. BRCA1 and its phosphorylation are most likely to be involved in the caffeine-inhibitable event upstream of G2 arrest.

reuse strategies in distributed complex event detection

Software Engineering Society of Korean; Institute for Information Scientists and Engineers; IEEE Reliability Society; KAIST (Korea Advanced Institute of Science and Technology); Korea Information Promotion Agency; Samsung SDS

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.