Single event effects induced by 15.14 MeV/u Xe-136 ions

Autoria(s): HouMD; ZhangQX; LiuJ; WangZG; JinYF; ZhuZY; ZhenHL; LiuCL; ChenXX; WeiXG; ZhangL; FanYC; ZhuZR; ZhangYT
Data(s)

2002
Identificador

http://ir.impcas.ac.cn/handle/113462/1549

http://www.irgrid.ac.cn/handle/1471x/127906
Fonte

HouMD；ZhangQX；LiuJ；WangZG；JinYF；ZhuZY；ZhenHL；LiuCL；ChenXX；WeiXG；ZhangL；FanYC；ZhuZR；ZhangYT.Single event effects induced by 15.14 MeV/u Xe-136 ions,HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2002,26(9):904-908
Palavras-Chave #single event upset #single event latchup #SRAM
Tipo

期刊论文
Acesso ao item digital