The dependence of single event upset cross-section on incident angle


Autoria(s): ZhangQX; HouMD; LiuJ; WangZG; JinYF; ZhuZY; SunYM
Data(s)

2004

Identificador

http://ir.impcas.ac.cn/handle/113462/1837

http://www.irgrid.ac.cn/handle/1471x/128066

Fonte

ZhangQX;HouMD;LiuJ;WangZG;JinYF;ZhuZY;SunYM.The dependence of single event upset cross-section on incident angle,ACTA PHYSICA SINICA,2004,53(1):566-570

Palavras-Chave #SRAM #single event upset #multiple bit upset #incident angle #deposited energy
Tipo

期刊论文