The Incident Angle Dependence of Quantum Efficiency of GaAs Based RCE Photodetectors

The theoretical analysis and experimental measurement on the incident angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40 nm wavelength variation of peak quantum efficiency is obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence is characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum such applications in space optical detections and communications.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Analysis for the angle dependence of GaAs based RCE photodetectors

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Sagnac interferometry as a probe to the commutation relation of a macroscopic quantum mirror

Single photon Sagnac interferometry as a probe to macroscopic quantum mechanics is considered at the theoretical level. For a freely moving macroscopic quantum mirror susceptible to radiation pressure force inside a Sagnac interferometer, a careful analysis of the input-output relation reveals that the particle spectrum readout at the bright and dark ports encode information concerning the noncommutativity of position and momentum of the macroscopic mirror. A feasible experimental scheme to probe the commutation relation of a macroscopic quantum mirror is outlined to explore the possible frontier between classical and quantum regimes. In the Appendix, the case of Michelson interferometry as a feasible probe is also sketched.

Dynamical analysis on heavy-ion fusion reactions near Coulomb barrier

The shell correction is proposed in the improved isospin dependent quantum molecular dynamics (Im-IQMD) model, which plays an important role in heavy-ion fusion reactions near Coulomb barrier. By using the ImIQMD model, the static and dynamical fusion barriers, dynamical barrier distribution in the fusion reactions are analyzed systematically. The fusion and capture excitation functions for a series of reaction systems are calculated and compared with experimental data. It is found that the fusion cross sections for neutron-rich systems increase obviously, and the strong shell effects of two colliding nuclei result in a decrease of the fusion cross sections at the sub-barrier energies. The lowering of the dynamical fusion barriers favors the enhancement of the sub-barrier fusion cross sections, which is related to the nucleon transfer and the neck formation in the fusion reactions.

Correlation analysis of the structures and stability constants of gadolinium(III) complexes

To simplify the abstraction of descriptors, for the correlation analysis of the stability constants of gadolinium(III) complexes and their ligand structures, aiming at gadolinium(III) complexes, we only considered the ligands and ignored the common parts of the structures, i.e., the metal ions. Quantum-chemical descriptors and topological indices were calculated to describe the structures of the ligands. Multiple regression analysis and neural networks were applied to construct the models between the ligands and the stability constants of gadolinium(III) complexes and satisfactory results were obtained.

Correlation analysis of the structures and pK(a) values of carboxylic acids

The quantum-chemical descriptors were used for QSPR study of the structures of carboxylic acids and their pK(a) values. The algorithm of "Leaps and Bounds" regression was performed for selection of the variables. The CoMFA method was carried out for 3D-QSPR. As the introduction of the charge of oxygen atom(Q(2)), the results obtained by CoMFA were improved greatly.

Correlation analysis of the structures and gas-liquid chromatographic retention indices of amines

Quantitative structure-retention relationship(QSRR) was studied for amines to gas-liquid chromatography on three stationary phases of different polarities with the topological indices A(m) (A(m1), A(m2), A(m3)) and gravitational index GI. The algorithm of "Leaps and Bounds" was performed for selection of the variables. And the multi-regression and the quasi-Newton neural networks were employed for the calculation with better results.

Electrochemical, SEM/EDS and quantum chemical study of phthalocyanines as corrosion inhibitors for mild steel in 1 mol/l HCl

The inhibition effect of metal-free phthalocyanine (H2Pc), copper phthalocyanine (CuPc) and copper phthalocyanine tetrasulfuric tetrasodium salt (CuPc center dot S(4)center dot Na-4) on mild steel in I mol/l HCl in the concentration range of 1.0 X 10(-5) to 1.0 X 10(-3) mol/l was investigated by electrochemical test, scanning electron microscope with energy dispersive spectrometer (SEM/EDS) and quantum chemical method. The potentiodynamic polarization curves of mild steel in hydrochloric acid containing these compounds showed both cathodic and anodic processes of steel corrosion were suppressed, and the Nyquist plots of impedance expressed mainly as a capacitive loop with different compounds and concentrations. For all these phthalocyanines, the inhibition efficiency increased with the increase in inhibitor concentration, while the inhibition efficiencies for these three phthalocyanines with the same concentration decreased in the order Of CuPc center dot S(4)center dot Na-4 > CuPc > H2Pc according to the electrochemical measurement results. The SEM/EDS analysis indicated that there are more lightly corroded and oxidative steel surface for the specimens after immersion in acid solution containing 1.0 x 10(-3) mol/l phthalocyanines than that in blank. The quantum chemical calculation results showed that the inhibition efficiency of these phthalocyanines increased with decrease in molecule's LUMO energy, which was different from the micro-cyclic compounds. (c) 2005 Elsevier B.V. All rights reserved.

Electrochemical, quantum chemical and SEM investigation of the inhibiting effect and mechanism of ciprofloxacin, norfloxacin and ofloxacin on the corrosion for mild steel in hydrochloric acid

The inhibiting effect and mechanism of 1-cyclopropyl-6-fluoro-1,4-dihydro-4-oxo-7-(1-piperazinyl)-3-quinoline carboxylicacid(ciprofloxacin), 1-ethyl-6-fluoro-1,4-dihydro-4-oxo-7-(1-piperazinyl)-3-quinoline carboxylic acid (norfloxacin) and (-)-(S)-9-fluoro-2,3-dihydro-3-methyl-10-(4-methyl-1-piperazinyl)-7-oxo-7 H-pyrido(1,2,3-de)-1,4-benzoxazine-6 carboxylic acid (ofloxacin) on the corrosion of mild steel in 1 mol/L HCl have been studied using electrochemical method, quantum chemical method and SEM at 303 K. The potentiodynamic results showed that these compounds suppressed both cathodic and anodic processes of mild steel corrosion in 1 mol/L HCl. The impedance spectroscopy showed that R-p values increased, and C-dl values decreased with the rising of the working concentration. Quantum chemical calculation showed that there was a positive correlation between some inhibitors structure properties and the inhibitory efficiency. The inhibitors function through adsorption followed Langmuir isotherm, and chemisorption made more contribution to the adsorption of the inhibitors on the steel surface compared with physical adsorption. SEM analysis suggested that the metal had been protected from aggressive corrosion because of the addition of the inhibitors.